Silicon bulkmicromachined piezoelectrically actuated corner cube retroflector

J. C. Park, J. Y. Park, J. Y. Won, D. H. Kim, J. Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this paper, a bulk-micromachined corner cube retroflector (CCR) with ultra-low voltage operation and negligible power consumption has been newly designed and fabricated for free space optical communication applications. The proposed CCR was comprised of bulk-micromachined vertical mirror which has two mutually orthogonal reflective surfaces and one piezoelectrically actuating horizontal mirror. The fabricated CCR has 300μm × 300μm of reflective surfaces. The vertical mirror with two orthogonal reflective surfaces can be obtained by using double SOI-wafer and anisotropic wet etching of (110) silicon wafer. The horizontal bottom mirror was comprised of two supporting and one actuating PZT cantilevers with meander shaped hinges. The supporting cantilevers and the meander hinges were used for accurate angular alignment of mirror by balancing and isolating the residual stresses occurred in the released PZT cantilevers after fabrication. The bottom actuated mirror exhibited a angular displacement of 1.87° at 5 volts applied with on-off switching in 276μs. The fabricated CCR can be digitally modulated up to 1kb/s.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages1578-1581
Number of pages4
DOIs
Publication statusPublished - 2011 Sep 1
Event2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: 2011 Jun 52011 Jun 9

Other

Other2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
CountryChina
CityBeijing
Period11/6/511/6/9

Fingerprint

Mirrors
Silicon
Hinges
Anisotropic etching
Wet etching
Optical communication
Silicon wafers
Residual stresses
Electric power utilization
Fabrication
Electric potential

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Park, J. C., Park, J. Y., Won, J. Y., Kim, D. H., & Park, J. (2011). Silicon bulkmicromachined piezoelectrically actuated corner cube retroflector. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 1578-1581). [5969743] https://doi.org/10.1109/TRANSDUCERS.2011.5969743
Park, J. C. ; Park, J. Y. ; Won, J. Y. ; Kim, D. H. ; Park, J. / Silicon bulkmicromachined piezoelectrically actuated corner cube retroflector. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. pp. 1578-1581
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Park, JC, Park, JY, Won, JY, Kim, DH & Park, J 2011, Silicon bulkmicromachined piezoelectrically actuated corner cube retroflector. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969743, pp. 1578-1581, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 11/6/5. https://doi.org/10.1109/TRANSDUCERS.2011.5969743

Silicon bulkmicromachined piezoelectrically actuated corner cube retroflector. / Park, J. C.; Park, J. Y.; Won, J. Y.; Kim, D. H.; Park, J.

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 1578-1581 5969743.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - In this paper, a bulk-micromachined corner cube retroflector (CCR) with ultra-low voltage operation and negligible power consumption has been newly designed and fabricated for free space optical communication applications. The proposed CCR was comprised of bulk-micromachined vertical mirror which has two mutually orthogonal reflective surfaces and one piezoelectrically actuating horizontal mirror. The fabricated CCR has 300μm × 300μm of reflective surfaces. The vertical mirror with two orthogonal reflective surfaces can be obtained by using double SOI-wafer and anisotropic wet etching of (110) silicon wafer. The horizontal bottom mirror was comprised of two supporting and one actuating PZT cantilevers with meander shaped hinges. The supporting cantilevers and the meander hinges were used for accurate angular alignment of mirror by balancing and isolating the residual stresses occurred in the released PZT cantilevers after fabrication. The bottom actuated mirror exhibited a angular displacement of 1.87° at 5 volts applied with on-off switching in 276μs. The fabricated CCR can be digitally modulated up to 1kb/s.

AB - In this paper, a bulk-micromachined corner cube retroflector (CCR) with ultra-low voltage operation and negligible power consumption has been newly designed and fabricated for free space optical communication applications. The proposed CCR was comprised of bulk-micromachined vertical mirror which has two mutually orthogonal reflective surfaces and one piezoelectrically actuating horizontal mirror. The fabricated CCR has 300μm × 300μm of reflective surfaces. The vertical mirror with two orthogonal reflective surfaces can be obtained by using double SOI-wafer and anisotropic wet etching of (110) silicon wafer. The horizontal bottom mirror was comprised of two supporting and one actuating PZT cantilevers with meander shaped hinges. The supporting cantilevers and the meander hinges were used for accurate angular alignment of mirror by balancing and isolating the residual stresses occurred in the released PZT cantilevers after fabrication. The bottom actuated mirror exhibited a angular displacement of 1.87° at 5 volts applied with on-off switching in 276μs. The fabricated CCR can be digitally modulated up to 1kb/s.

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Park JC, Park JY, Won JY, Kim DH, Park J. Silicon bulkmicromachined piezoelectrically actuated corner cube retroflector. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 1578-1581. 5969743 https://doi.org/10.1109/TRANSDUCERS.2011.5969743