Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Jae Won Na, You Seung Rim, Hee Jun Kim, Jin Hyeok Lee, Seonghwan Hong, Hyun Jae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO2) dielectric layer are in contact and thermally processed, a Si4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm2 V-1 s-1 and a on/off current ratio over 107 is successfully demonstrated.

Original languageEnglish
Pages (from-to)29849-29856
Number of pages8
JournalACS Applied Materials and Interfaces
Volume9
Issue number35
DOIs
Publication statusPublished - 2017 Sep 6

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Zinc Oxide
Indium
Silicon
Thin film transistors
Zinc oxide
Cations
Positive ions
Metals
Silicon Dioxide
Oxide films
Silica
Oxide semiconductors
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Na, Jae Won ; Rim, You Seung ; Kim, Hee Jun ; Lee, Jin Hyeok ; Hong, Seonghwan ; Kim, Hyun Jae. / Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 35. pp. 29849-29856.
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Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process. / Na, Jae Won; Rim, You Seung; Kim, Hee Jun; Lee, Jin Hyeok; Hong, Seonghwan; Kim, Hyun Jae.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 35, 06.09.2017, p. 29849-29856.

Research output: Contribution to journalArticle

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