Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Jae Won Na, You Seung Rim, Hee Jun Kim, Jin Hyeok Lee, Seonghwan Hong, Hyun Jae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)


Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO2) dielectric layer are in contact and thermally processed, a Si4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm2 V-1 s-1 and a on/off current ratio over 107 is successfully demonstrated.

Original languageEnglish
Pages (from-to)29849-29856
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number35
Publication statusPublished - 2017 Sep 6


All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this