Silicon-core coaxial through silicon via for low-loss RF Si-interposer

Won Chul Lee, Byung Wook Min, Jun Chul Kim, Jong Min Yook

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


In this letter, a new low-loss and low-cost through silicon via (TSV) process is presented. The proposed silicon-core coaxial via (S-COV) process is very simple and time-saving compared with a conventional TSV. In this structure, a metal-coated silicon-pole is used as a vertical interconnect instead of a fully filled metal via. The depth of the fabricated S-COV is 120 μm and the minimum diameter of the signal core and dielectric gap to ground are 40 and 20 μm, respectively. In the well-matched condition, the measured insertion loss of the single S-COV is 0.053 dB at 10 GHz.

Original languageEnglish
Article number7911218
Pages (from-to)428-430
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number5
Publication statusPublished - 2017 May

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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