Silicon-core coaxial through silicon via for low-loss RF Si-interposer

Won Chul Lee, Byung-Wook Min, Jun Chul Kim, Jong Min Yook

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this letter, a new low-loss and low-cost through silicon via (TSV) process is presented. The proposed silicon-core coaxial via (S-COV) process is very simple and time-saving compared with a conventional TSV. In this structure, a metal-coated silicon-pole is used as a vertical interconnect instead of a fully filled metal via. The depth of the fabricated S-COV is 120 μm and the minimum diameter of the signal core and dielectric gap to ground are 40 and 20 μm, respectively. In the well-matched condition, the measured insertion loss of the single S-COV is 0.053 dB at 10 GHz.

Original languageEnglish
Article number7911218
Pages (from-to)428-430
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume27
Issue number5
DOIs
Publication statusPublished - 2017 May 1

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Silicon
silicon
Insertion losses
Metals
insertion loss
metals
Poles
poles
Costs

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lee, Won Chul ; Min, Byung-Wook ; Kim, Jun Chul ; Yook, Jong Min. / Silicon-core coaxial through silicon via for low-loss RF Si-interposer. In: IEEE Microwave and Wireless Components Letters. 2017 ; Vol. 27, No. 5. pp. 428-430.
@article{6e728a4026f646d48105508d22479302,
title = "Silicon-core coaxial through silicon via for low-loss RF Si-interposer",
abstract = "In this letter, a new low-loss and low-cost through silicon via (TSV) process is presented. The proposed silicon-core coaxial via (S-COV) process is very simple and time-saving compared with a conventional TSV. In this structure, a metal-coated silicon-pole is used as a vertical interconnect instead of a fully filled metal via. The depth of the fabricated S-COV is 120 μm and the minimum diameter of the signal core and dielectric gap to ground are 40 and 20 μm, respectively. In the well-matched condition, the measured insertion loss of the single S-COV is 0.053 dB at 10 GHz.",
author = "Lee, {Won Chul} and Byung-Wook Min and Kim, {Jun Chul} and Yook, {Jong Min}",
year = "2017",
month = "5",
day = "1",
doi = "10.1109/LMWC.2017.2690826",
language = "English",
volume = "27",
pages = "428--430",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

Silicon-core coaxial through silicon via for low-loss RF Si-interposer. / Lee, Won Chul; Min, Byung-Wook; Kim, Jun Chul; Yook, Jong Min.

In: IEEE Microwave and Wireless Components Letters, Vol. 27, No. 5, 7911218, 01.05.2017, p. 428-430.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Silicon-core coaxial through silicon via for low-loss RF Si-interposer

AU - Lee, Won Chul

AU - Min, Byung-Wook

AU - Kim, Jun Chul

AU - Yook, Jong Min

PY - 2017/5/1

Y1 - 2017/5/1

N2 - In this letter, a new low-loss and low-cost through silicon via (TSV) process is presented. The proposed silicon-core coaxial via (S-COV) process is very simple and time-saving compared with a conventional TSV. In this structure, a metal-coated silicon-pole is used as a vertical interconnect instead of a fully filled metal via. The depth of the fabricated S-COV is 120 μm and the minimum diameter of the signal core and dielectric gap to ground are 40 and 20 μm, respectively. In the well-matched condition, the measured insertion loss of the single S-COV is 0.053 dB at 10 GHz.

AB - In this letter, a new low-loss and low-cost through silicon via (TSV) process is presented. The proposed silicon-core coaxial via (S-COV) process is very simple and time-saving compared with a conventional TSV. In this structure, a metal-coated silicon-pole is used as a vertical interconnect instead of a fully filled metal via. The depth of the fabricated S-COV is 120 μm and the minimum diameter of the signal core and dielectric gap to ground are 40 and 20 μm, respectively. In the well-matched condition, the measured insertion loss of the single S-COV is 0.053 dB at 10 GHz.

UR - http://www.scopus.com/inward/record.url?scp=85018967103&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018967103&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2017.2690826

DO - 10.1109/LMWC.2017.2690826

M3 - Article

VL - 27

SP - 428

EP - 430

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 5

M1 - 7911218

ER -