Silicon-core coaxial through silicon via for low-loss RF Si-interposer

Won Chul Lee; Byung Wook Min; Jun Chul Kim; Jong Min Yook

doi:10.1109/LMWC.2017.2690826

Silicon-core coaxial through silicon via for low-loss RF Si-interposer

Won Chul Lee, Byung Wook Min, Jun Chul Kim, Jong Min Yook

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

In this letter, a new low-loss and low-cost through silicon via (TSV) process is presented. The proposed silicon-core coaxial via (S-COV) process is very simple and time-saving compared with a conventional TSV. In this structure, a metal-coated silicon-pole is used as a vertical interconnect instead of a fully filled metal via. The depth of the fabricated S-COV is 120 μm and the minimum diameter of the signal core and dielectric gap to ground are 40 and 20 μm, respectively. In the well-matched condition, the measured insertion loss of the single S-COV is 0.053 dB at 10 GHz.

Original language	English
Article number	7911218
Pages (from-to)	428-430
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	27
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2017.2690826
Publication status	Published - 2017 May

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2017.2690826

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title = "Silicon-core coaxial through silicon via for low-loss RF Si-interposer",

abstract = "In this letter, a new low-loss and low-cost through silicon via (TSV) process is presented. The proposed silicon-core coaxial via (S-COV) process is very simple and time-saving compared with a conventional TSV. In this structure, a metal-coated silicon-pole is used as a vertical interconnect instead of a fully filled metal via. The depth of the fabricated S-COV is 120 μm and the minimum diameter of the signal core and dielectric gap to ground are 40 and 20 μm, respectively. In the well-matched condition, the measured insertion loss of the single S-COV is 0.053 dB at 10 GHz.",

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Y1 - 2017/5

N2 - In this letter, a new low-loss and low-cost through silicon via (TSV) process is presented. The proposed silicon-core coaxial via (S-COV) process is very simple and time-saving compared with a conventional TSV. In this structure, a metal-coated silicon-pole is used as a vertical interconnect instead of a fully filled metal via. The depth of the fabricated S-COV is 120 μm and the minimum diameter of the signal core and dielectric gap to ground are 40 and 20 μm, respectively. In the well-matched condition, the measured insertion loss of the single S-COV is 0.053 dB at 10 GHz.

AB - In this letter, a new low-loss and low-cost through silicon via (TSV) process is presented. The proposed silicon-core coaxial via (S-COV) process is very simple and time-saving compared with a conventional TSV. In this structure, a metal-coated silicon-pole is used as a vertical interconnect instead of a fully filled metal via. The depth of the fabricated S-COV is 120 μm and the minimum diameter of the signal core and dielectric gap to ground are 40 and 20 μm, respectively. In the well-matched condition, the measured insertion loss of the single S-COV is 0.053 dB at 10 GHz.

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Silicon-core coaxial through silicon via for low-loss RF Si-interposer

Abstract

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