Silicon electronic–photonic integrated 25 Gb/s ring modulator transmitter with a built-in temperature controller

Minkyu Kim; Min Hyeong Kim; Youngkwan Jo; Hyun Kyu Kim; Stefan Lischke; Christian Mai; Lars Zimmermann; Woo Young Choi

doi:10.1364/PRJ.413407

Silicon electronic–photonic integrated 25 Gb/s ring modulator transmitter with a built-in temperature controller

Minkyu Kim, Min Hyeong Kim, Youngkwan Jo, Hyun Kyu Kim, Stefan Lischke, Christian Mai, Lars Zimmermann, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We demonstrate a silicon electronic–photonic integrated 25 Gb/s nonreturn-to-zero transmitter that includes driver circuits, depletion-type Si ring modulator, Ge photodetector, temperature sensor, on-chip heater, and temperature controller, all monolithically integrated on a 0.25 μm photonic BiCMOS technology platform. The integrated transmitter successfully provides stable and optimal 25 Gb/s modulation characteristics against external temperature fluctuation.

Original language	English
Pages (from-to)	507-513
Number of pages	7
Journal	Photonics Research
Volume	9
Issue number	4
DOIs	https://doi.org/10.1364/PRJ.413407
Publication status	Published - 2021 Apr

Bibliographical note

Publisher Copyright:
© 2021 Chinese Laser Press

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1364/PRJ.413407

Cite this

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title = "Silicon electronic–photonic integrated 25 Gb/s ring modulator transmitter with a built-in temperature controller",

abstract = "We demonstrate a silicon electronic–photonic integrated 25 Gb/s nonreturn-to-zero transmitter that includes driver circuits, depletion-type Si ring modulator, Ge photodetector, temperature sensor, on-chip heater, and temperature controller, all monolithically integrated on a 0.25 μm photonic BiCMOS technology platform. The integrated transmitter successfully provides stable and optimal 25 Gb/s modulation characteristics against external temperature fluctuation.",

author = "Minkyu Kim and Kim, {Min Hyeong} and Youngkwan Jo and Kim, {Hyun Kyu} and Stefan Lischke and Christian Mai and Lars Zimmermann and Choi, {Woo Young}",

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doi = "10.1364/PRJ.413407",

language = "English",

volume = "9",

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T1 - Silicon electronic–photonic integrated 25 Gb/s ring modulator transmitter with a built-in temperature controller

AU - Kim, Minkyu

AU - Kim, Min Hyeong

AU - Jo, Youngkwan

AU - Kim, Hyun Kyu

AU - Lischke, Stefan

AU - Mai, Christian

AU - Zimmermann, Lars

AU - Choi, Woo Young

PY - 2021/4

Y1 - 2021/4

N2 - We demonstrate a silicon electronic–photonic integrated 25 Gb/s nonreturn-to-zero transmitter that includes driver circuits, depletion-type Si ring modulator, Ge photodetector, temperature sensor, on-chip heater, and temperature controller, all monolithically integrated on a 0.25 μm photonic BiCMOS technology platform. The integrated transmitter successfully provides stable and optimal 25 Gb/s modulation characteristics against external temperature fluctuation.

AB - We demonstrate a silicon electronic–photonic integrated 25 Gb/s nonreturn-to-zero transmitter that includes driver circuits, depletion-type Si ring modulator, Ge photodetector, temperature sensor, on-chip heater, and temperature controller, all monolithically integrated on a 0.25 μm photonic BiCMOS technology platform. The integrated transmitter successfully provides stable and optimal 25 Gb/s modulation characteristics against external temperature fluctuation.

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U2 - 10.1364/PRJ.413407

DO - 10.1364/PRJ.413407

M3 - Article

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EP - 513

JO - Photonics Research

JF - Photonics Research

SN - 2327-9125

IS - 4

ER -

Silicon electronic–photonic integrated 25 Gb/s ring modulator transmitter with a built-in temperature controller

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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