The sensing module that converts physical or chemical stimuli into electrical signals is the core of future smart electronics in the post-Moore era. Challenges lie in the realization and integration of different detecting functions on a single chip. We propose a new design of on-chip construction for low-power consumption sensor, which is based on the optoelectronic detection mechanism with external stimuli and compatible with CMOS technology. A combination of flipped silicon nanomembrane phototransistors and stimuli-responsive materials presents low-power consumption (CMOS level) and demonstrates great functional expansibility of sensing targets, e.g., hydrogen concentration and relative humidity. With a device-first, wafer-compatible process introduced for large-scale silicon flexible electronics, our work shows great potential in the development of flexible and integrated smart sensing systems for the realization of Internet of Things applications.
Bibliographical noteFunding Information:
This work was supported by the National Natural Science Foundation of China (61975035, 51711540298, and 51925208), the Science and Technology Commission of Shanghai Municipality (17JC1401700), the National Key Technologies R&D Program of China (2015ZX02102-003), the Changjiang Young Scholars Program of China, and the Program of Shanghai Academic Research Leader (19XD1400600). T.L. acknowledges the support from the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2017M3A7B4049466), the Yonsei-KIST Convergence Research Program and the Priority Research Centers Program through the NRF (NRF-2019R1A6A1A11055660).
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