We demonstrated a silicon photonics-wireless interface integrated circuit (IC) realized in 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor technology, which converts 850-nm optical nonreturn-to-zero data into 60-GHz binary phase-shift keying wireless data. A transmission of 1.6 Gb/s in 60 GHz using the interface IC is successfully demonstrated with the error-free operation achieved at 6-dBm optical input power.
Bibliographical noteFunding Information:
Manuscript received February 17, 2012; revised April 6, 2012; accepted April 10, 2012. Date of publication May 3, 2012; date of current version May 22, 2012. This work (2011-0018073) was supported by Mid-career Researcher Program through NRF grant funded by the MEST.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering