Simple fabrication method of silicon/tungsten oxide nanowires heterojunction for NO2 gas sensors

Kyounghoon Lee, Dae Hyun Baek, Hyungjoo Na, Jungwook Choi, Jongbaeg Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Heterojunctions, formed at the interface between two different materials, have attracted much attention as a gas-sensing material. In particular, Si/tungsten oxide (WOX) heterojunctions are well known to be capable of gas detection at low temperature and to increase the sensitivity to and selectivity of NO2. However, during the fabrication process of the Si/WOX nanostructure-based sensor it is difficult to control the synthesis position of the nanostructures; hence, it is complicated or time consuming. In this work, semiconducting gas sensors based on n-type silicon/n-type suspended tungsten oxide nanowire (WOX NW) heterojunctions were fabricated by stress-induced method for WOX NW synthesis on Si MEMS structures. With this fabrication technique, the growth position of the WOX NWs can be controlled by patterning of the WOX seed film, and the NWs can be synthesized by simply heating the seed film for 20 min. In addition, all fabrication processes consist of batch-processes. Unlike conventional WOX-based sensors, the resistance of this sensor is reduced in the presence of NO2, an oxidizing gas, due to the band bending phenomenon of the Si/WOX NW heterojunction. The fabricated sensor can detect 500 ppb of NO2 and exhibits excellent selectivity to CO and toluene, which are exhaust gases, like NO2. This selectivity will be particularly useful when using sensors to detect NO2 in exhaust gases of automobiles or factories.

Original languageEnglish
Pages (from-to)522-528
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume265
DOIs
Publication statusPublished - 2018 Jul 15

Fingerprint

tungsten oxides
Silicon
Chemical sensors
silicon oxides
Nanowires
Tungsten
Heterojunctions
heterojunctions
nanowires
Fabrication
fabrication
Oxides
sensors
Sensors
gases
Gases
Exhaust gases
exhaust gases
selectivity
Seed

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lee, Kyounghoon ; Baek, Dae Hyun ; Na, Hyungjoo ; Choi, Jungwook ; Kim, Jongbaeg. / Simple fabrication method of silicon/tungsten oxide nanowires heterojunction for NO2 gas sensors. In: Sensors and Actuators, B: Chemical. 2018 ; Vol. 265. pp. 522-528.
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Simple fabrication method of silicon/tungsten oxide nanowires heterojunction for NO2 gas sensors. / Lee, Kyounghoon; Baek, Dae Hyun; Na, Hyungjoo; Choi, Jungwook; Kim, Jongbaeg.

In: Sensors and Actuators, B: Chemical, Vol. 265, 15.07.2018, p. 522-528.

Research output: Contribution to journalArticle

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