Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-based Phototransistors for Visible Light Detection

Byung Ha Kang, Won Gi Kim, Jusung Chung, Jin Hyeok Lee, Hyun Jae Kim

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	10
Pages (from-to)	7223-7230
Number of pages	8
Journal	ACS applied materials & interfaces
Volume	10
Issue number	8
Publication status	Published - 2018 Feb

Cite this

@article{5edcdc61d1924764bb214e588d5181c2,

title = "Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-based Phototransistors for Visible Light Detection",

author = "Kang, {Byung Ha} and Kim, {Won Gi} and Jusung Chung and Lee, {Jin Hyeok} and Kim, {Hyun Jae}",

year = "2018",

month = feb,

language = "English",

volume = "10",

pages = "7223--7230",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-based Phototransistors for Visible Light Detection

AU - Kang, Byung Ha

AU - Kim, Won Gi

AU - Chung, Jusung

AU - Lee, Jin Hyeok

AU - Kim, Hyun Jae

PY - 2018/2

Y1 - 2018/2

M3 - Article

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SN - 1944-8244

VL - 10

SP - 7223

EP - 7230

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 8

M1 - 10

ER -