Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-based Phototransistors for Visible Light Detection

Byung Ha Kang, Won Gi Kim, Jusung Chung, Jin Hyeok Lee, Hyun Jae Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)
Original languageEnglish
Article number10
Pages (from-to)7223-7230
Number of pages8
JournalACS applied materials & interfaces
Volume10
Issue number8
Publication statusPublished - 2018 Feb

Cite this

@article{5edcdc61d1924764bb214e588d5181c2,
title = "Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-based Phototransistors for Visible Light Detection",
author = "Kang, {Byung Ha} and Kim, {Won Gi} and Jusung Chung and Lee, {Jin Hyeok} and Kim, {Hyun Jae}",
year = "2018",
month = "2",
language = "English",
volume = "10",
pages = "7223--7230",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "8",

}

Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-based Phototransistors for Visible Light Detection. / Kang, Byung Ha; Kim, Won Gi; Chung, Jusung; Lee, Jin Hyeok; Kim, Hyun Jae.

In: ACS applied materials & interfaces, Vol. 10, No. 8, 10, 02.2018, p. 7223-7230.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-based Phototransistors for Visible Light Detection

AU - Kang, Byung Ha

AU - Kim, Won Gi

AU - Chung, Jusung

AU - Lee, Jin Hyeok

AU - Kim, Hyun Jae

PY - 2018/2

Y1 - 2018/2

M3 - Article

VL - 10

SP - 7223

EP - 7230

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 8

M1 - 10

ER -