Here, we proposed a novel and simple strategy for fabricating solution-processed In-Ga-Zn-O thin-film transistors (TFTs) at low annealing temperature via vertical diffusion technique. This technique enables a significant reduction of processing temperatures (< 300°C) with maintaining its electrical performances and is useful in the fabrication of flexible/transparent oxide TFTs.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Issue number||Book 3|
|Publication status||Published - 2015 Jun 1|
|Event||2015 SID International Symposium - San Jose, United States|
Duration: 2015 Jun 4 → …
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819).
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