Simple method for low-temperature processed In-Ga-Zn-O thin-film transistors by vertical diffusion technique

Si Joon Kim, Seokhyun Yoon, Young Jun Tak, Hyun Jae Kim

Research output: Contribution to journalConference article

Abstract

Here, we proposed a novel and simple strategy for fabricating solution-processed In-Ga-Zn-O thin-film transistors (TFTs) at low annealing temperature via vertical diffusion technique. This technique enables a significant reduction of processing temperatures (< 300°C) with maintaining its electrical performances and is useful in the fabrication of flexible/transparent oxide TFTs.

Original languageEnglish
Pages (from-to)1221-1223
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue numberBook 3
Publication statusPublished - 2015 Jun 1
Event2015 SID International Symposium - San Jose, United States
Duration: 2015 Jun 4 → …

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Thin film transistors
Oxide films
Annealing
Fabrication
Temperature
Processing

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "Here, we proposed a novel and simple strategy for fabricating solution-processed In-Ga-Zn-O thin-film transistors (TFTs) at low annealing temperature via vertical diffusion technique. This technique enables a significant reduction of processing temperatures (< 300°C) with maintaining its electrical performances and is useful in the fabrication of flexible/transparent oxide TFTs.",
author = "Kim, {Si Joon} and Seokhyun Yoon and Tak, {Young Jun} and Kim, {Hyun Jae}",
year = "2015",
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Simple method for low-temperature processed In-Ga-Zn-O thin-film transistors by vertical diffusion technique. / Kim, Si Joon; Yoon, Seokhyun; Tak, Young Jun; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 46, No. Book 3, 01.06.2015, p. 1221-1223.

Research output: Contribution to journalConference article

TY - JOUR

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AU - Kim, Si Joon

AU - Yoon, Seokhyun

AU - Tak, Young Jun

AU - Kim, Hyun Jae

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Here, we proposed a novel and simple strategy for fabricating solution-processed In-Ga-Zn-O thin-film transistors (TFTs) at low annealing temperature via vertical diffusion technique. This technique enables a significant reduction of processing temperatures (< 300°C) with maintaining its electrical performances and is useful in the fabrication of flexible/transparent oxide TFTs.

AB - Here, we proposed a novel and simple strategy for fabricating solution-processed In-Ga-Zn-O thin-film transistors (TFTs) at low annealing temperature via vertical diffusion technique. This technique enables a significant reduction of processing temperatures (< 300°C) with maintaining its electrical performances and is useful in the fabrication of flexible/transparent oxide TFTs.

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