Simple two-step fabrication method of Bi2Te3 nanowires

Joohoon Kang; Jin Seo Noh; Wooyoung Lee

doi:10.1186/1556-276X-6-277

Simple two-step fabrication method of Bi₂Te₃ nanowires

Joohoon Kang, Jin Seo Noh, Wooyoung Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Bismuth telluride (Bi₂Te₃) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi₂Te₃ nanowires. In this study, a simple and reliable method for the growth of Bi₂Te₃ nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi₂Te₃ nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

Original language	English
Article number	277
Journal	Nanoscale Research Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-6-277
Publication status	Published - 2011 Jan

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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Kang, J., Noh, J. S., & Lee, W. (2011). Simple two-step fabrication method of Bi₂Te₃ nanowires. Nanoscale Research Letters, 6(1), [277]. https://doi.org/10.1186/1556-276X-6-277

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