Simple two-step fabrication method of Bi₂Te₃ nanowires

Bismuth telluride (Bi₂Te₃) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi₂Te₃ nanowires. In this study, a simple and reliable method for the growth of Bi₂Te₃ nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi₂Te₃ nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.