Simple two-step fabrication method of Bi2Te3 nanowires

Joohoon Kang; Jin Seo Noh; Wooyoung Lee

doi:10.1186/1556-276X-6-277

Simple two-step fabrication method of Bi₂Te₃ nanowires

Joohoon Kang, Jin Seo Noh, Wooyoung Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Bismuth telluride (Bi₂Te₃) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi₂Te₃ nanowires. In this study, a simple and reliable method for the growth of Bi₂Te₃ nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi₂Te₃ nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

Original language	English
Article number	277
Journal	Nanoscale Research Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-6-277
Publication status	Published - 2011 Jan

Bibliographical note

Funding Information:
This study was supported by the Priority Research Centers Program (2009-0093823) through the National Research Foundation of Korea (NRF), a grant from the "Center for Nanostructured Materials Technology," under the "21st Century Frontier R&D Programs" of the Ministry of Education, Science, and by the Pioneer Research Center Program (2010-0019313) through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1186/1556-276X-6-277

Cite this

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title = "Simple two-step fabrication method of Bi2Te3 nanowires",

abstract = "Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.",

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