Abstract
Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.
| Original language | English |
|---|---|
| Pages (from-to) | X1-5 |
| Journal | Nanoscale Research Letters |
| Volume | 6 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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Simple two-step fabrication method of Bi2Te3 nanowires. / Kang, Joohoon; Noh, Jin Seo; Lee, Wooyoung.
In: Nanoscale Research Letters, Vol. 6, No. 1, 01.01.2011, p. X1-5.Research output: Contribution to journal › Article
TY - JOUR
T1 - Simple two-step fabrication method of Bi2Te3 nanowires
AU - Kang, Joohoon
AU - Noh, Jin Seo
AU - Lee, Wooyoung
PY - 2011/1/1
Y1 - 2011/1/1
N2 - Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.
AB - Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.
UR - http://www.scopus.com/inward/record.url?scp=84255168554&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84255168554&partnerID=8YFLogxK
U2 - 10.1186/1556-276X-6-277
DO - 10.1186/1556-276X-6-277
M3 - Article
C2 - 21711810
AN - SCOPUS:84255168554
VL - 6
SP - X1-5
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
SN - 1931-7573
IS - 1
ER -