Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along  direction.
Bibliographical noteFunding Information:
This study was supported by the Priority Research Centers Program (2009-0093823) through the National Research Foundation of Korea (NRF), a grant from the "Center for Nanostructured Materials Technology," under the "21st Century Frontier R&D Programs" of the Ministry of Education, Science, and by the Pioneer Research Center Program (2010-0019313) through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics