Simple two-step fabrication method of Bi2Te3 nanowires

Joohoon Kang, Jin Seo Noh, Wooyoung Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

Original languageEnglish
Pages (from-to)X1-5
JournalNanoscale Research Letters
Volume6
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

Nanowires
nanowires
Fabrication
fabrication
bismuth tellurides
Bismuth
Sputtering
sputtering
insulators
Annealing
Crystalline materials
Transmission electron microscopy
transmission electron microscopy
annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kang, Joohoon ; Noh, Jin Seo ; Lee, Wooyoung. / Simple two-step fabrication method of Bi2Te3 nanowires. In: Nanoscale Research Letters. 2011 ; Vol. 6, No. 1. pp. X1-5.
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Simple two-step fabrication method of Bi2Te3 nanowires. / Kang, Joohoon; Noh, Jin Seo; Lee, Wooyoung.

In: Nanoscale Research Letters, Vol. 6, No. 1, 01.01.2011, p. X1-5.

Research output: Contribution to journalArticle

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