Simulation model for Electron irradiated IGZO thin film transistors

G. K. Dayananda, Rai C. Shantharama, A. Jayarama, Heon Je Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
JournalJournal of Semiconductors
Publication statusPublished - 2018 Feb

Cite this

@article{57c63e41eb15482984ad7e9ff401ea88,
title = "Simulation model for Electron irradiated IGZO thin film transistors",
author = "Dayananda, {G. K.} and Shantharama, {Rai C.} and A. Jayarama and Kim, {Heon Je}",
year = "2018",
month = "2",
language = "English",
journal = "Journal of Semiconductors",
issn = "1674-4926",
publisher = "IOS Press",

}

Simulation model for Electron irradiated IGZO thin film transistors. / Dayananda, G. K.; Shantharama, Rai C.; Jayarama, A.; Kim, Heon Je.

In: Journal of Semiconductors, 02.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Simulation model for Electron irradiated IGZO thin film transistors

AU - Dayananda, G. K.

AU - Shantharama, Rai C.

AU - Jayarama, A.

AU - Kim, Heon Je

PY - 2018/2

Y1 - 2018/2

M3 - Article

JO - Journal of Semiconductors

JF - Journal of Semiconductors

SN - 1674-4926

ER -