Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX₂ (X = S, Se, Te) n-MOSFETs

Transport properties of about 3 nm channel length monolayer MoX₂ (X = S, Se, Te) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) are examined through ballistic full-band quantum transport simulations with atomistic tight-binding Hamiltonians. Our simulations reveal that single gate (SG) monolayer MoX₂ MOSFETs with an approximately 2 nm gate underlap exhibit reasonable subthreshold characteristics. From these full-band simulations, we observe channel orientation dependent negative differential resistance (NDR) in the out characteristics in the ballistic transport regime. We discuss and compare NDR properties of monolayer MoX₂ n-channel MOSFETs in different transport directions.