Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Transport properties of about 3 nm channel length monolayer MoX2 (X = S, Se, Te) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) are examined through ballistic full-band quantum transport simulations with atomistic tight-binding Hamiltonians. Our simulations reveal that single gate (SG) monolayer MoX2 MOSFETs with an approximately 2 nm gate underlap exhibit reasonable subthreshold characteristics. From these full-band simulations, we observe channel orientation dependent negative differential resistance (NDR) in the out characteristics in the ballistic transport regime. We discuss and compare NDR properties of monolayer MoX2 n-channel MOSFETs in different transport directions.

Original languageEnglish
Article number145101
JournalJournal of Physics D: Applied Physics
Volume48
Issue number14
DOIs
Publication statusPublished - 2015 Apr 15

Bibliographical note

Publisher Copyright:
© 2015 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX<sub>2</sub> (X = S, Se, Te) n-MOSFETs'. Together they form a unique fingerprint.

Cite this