Simultaneous engineering of the interface and bulk layer of Al/sol-NiO x/Si structured resistive random access memory devices

Doo Hyun Yoon, Young Jun Tak, Sung Pyo Park, Joohye Jung, Heesoo Lee, Hyun Jae Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In our previous work, the pristine sol-NiOx/Si based device did not exhibit reproducible resistive switching due to the presence of native interlayer oxide. To solve this problem, we investigated high-pressure hydrogen gas annealing at a stack of Al/sol-NiOx/Si to engineer the interface and bulk layer simultaneously. Different from the pure nitrogen high-pressure gas annealing which only affects the bulk properties of the system, we found that the high-pressure hydrogen gas can alter both the interfaces and bulk layers. As a result, the native interlayer oxide thickness at the NiO x/Si interface was reduced and the overall density of oxygen vacancies was increased due to the reduction of atomic hydrogen. Consequently, a good condition for less randomized generation of conducting pathways was secured which led to improved stability of high- and low-resistance states, as well as a larger ratio of high and low resistances regardless of a high free energy of formation at the bottom electrode (Si). This journal is

Original languageEnglish
Pages (from-to)6148-6154
Number of pages7
JournalJournal of Materials Chemistry C
Volume2
Issue number30
DOIs
Publication statusPublished - 2014 Aug 14

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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