Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors

High-pressure annealing (HPA) affected the thermodynamics of the formation of a solution-processed oxide film through the simultaneous modification of thermal decomposition and compression, and enabled the use of lower annealing temperatures, which was favourable for device implementation. HPA also reduced the film thickness and decreased the porosity, resulting in enhanced device characteristics at low temperature. Surface and depth profile characterization using X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), and ellipsometry suggested that the HPA process supported the effective decomposition of commercial metal-nitrate and/or -salt precursors and strong bonding between oxygen and the metal ions, ultimately reducing the amount of organic residue. The as-optimized HPA process allowed for high-performance solution-processed flexible InZnO (IZO) TFTs on a polymeric substrate at 220 °C with low sub-threshold voltage swing (as low as 0.56 V dec^-1), high on-off ratio of over 10⁶, and field-effect mobility as high as 1.78 cm ² V^-1 s^-1, respectively. These results demonstrate that this is a simple and efficient promising approach for improving the performance of solution-processed electronic devices at low temperatures.