Simultaneous protection of organic p- and n-channels in complementary inverter from aging and bias-stress by DNA-base guanine/Al2O3 double layer

Junyeong Lee, Hyuncheol Hwang, Sung Wook Min, Jae Min Shin, Jin Sung Kim, Pyo Jin Jeon, Hee Sung Lee, Seongil Im

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Although organic field-effect transistors (OFETs) have various advantages of lightweight, low-cost, mechanical flexibility, and nowadays even higher mobility than amorphous Si-based FET, stability issue under bias and ambient condition critically hinder its practical application. One of the most detrimental effects on organic layer comes from penetrated atmospheric species such as oxygen and water. To solve such degradation problems, several molecular engineering tactics are introduced: forming a kinetic barrier, lowering the level of molecule orbitals, and increasing the band gap. However, direct passivation of organic channels, the most promising strategy, has not been reported as often as other methods. Here, we resolved the ambient stability issues of p-type (heptazole)/or n-type (PTCDI-C13) OFETs and their bias-stability issues at once, using DNA-base small molecule guanine (C5H5N5O)/Al2O3 bilayer. The guanine protects the organic channels as buffer/and H getter layer between the channels and capping Al2O3, whereas the oxide capping resists ambient molecules. As a result, both p-type and n-type OFETs are simultaneously protected from gate-bias stress and 30 days-long ambient aging, finally demonstrating a highly stable, high-gain complementary-type logic inverter.

Original languageEnglish
Pages (from-to)1765-1771
Number of pages7
JournalACS Applied Materials and Interfaces
Volume7
Issue number3
DOIs
Publication statusPublished - 2015 Jan 28

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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