Single and four-element Ka-band transmit/receive phased-array silicon RFICs with 5-bit amplitude and phase control

Dong Woo Kang, Jeong Geun Kim, Byung Wook Min, Gabriel M. Rebeiz

Research output: Contribution to journalArticle

106 Citations (Scopus)

Abstract

Ka-band SiGe BiCMOS single-and four-element phased arrays capable of both transmit and receive operation with 5-bit phase and amplitude control are presented. The design is based on the All-RF architecture with RF phase shifters and attenuators, and a 4:1 passive power combining/dividing network. The four-element array results in an average gain of ̃0 dB per channel and a noise figure of 9.0 dB, and is designed to be placed behind III-V T/R modules. The rms phase error is <5.6° (5-bit operation) and <12.5° (4-bit operation) over a 2 or 5 GHz instantaneous bandwidth, respectively, centered at around 36.5 GHz. In the receive mode, the input P1dB is 16 dBm per channel (IIP3 of 5.9 dBm), and in the transmit mode, the output P1dB is +4-5 dBm, all at 35-36 GHz. The measured isolation between the channels is better than 30 dB. The array maintained excellent phase characteristics up to 100 C with no change in the rms phase error. Also, ten different four-element phased arrays were tested (40 channels) and result in an rms gain variation of <0.5 dB at 34-39 GHz. The four-element array consumes 171 and 142 mW in the Tx and Rx modes from 1.8 V, and occupies an area of 2.0 ×2.02 mm2. To our knowledge, this is the smallest and lowest power consumption on-chip-band phased-array to-date.

Original languageEnglish
Article number5313830
Pages (from-to)3534-3543
Number of pages10
JournalIEEE Transactions on Microwave Theory and Techniques
Volume57
Issue number12
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

Phase control
phase control
phased arrays
phase error
Silicon
silicon
channel noise
attenuators
Phase shifters
Noise figure
isolation
Electric power utilization
modules
chips
bandwidth
Bandwidth
output

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Ka-band SiGe BiCMOS single-and four-element phased arrays capable of both transmit and receive operation with 5-bit phase and amplitude control are presented. The design is based on the All-RF architecture with RF phase shifters and attenuators, and a 4:1 passive power combining/dividing network. The four-element array results in an average gain of ̃0 dB per channel and a noise figure of 9.0 dB, and is designed to be placed behind III-V T/R modules. The rms phase error is <5.6° (5-bit operation) and <12.5° (4-bit operation) over a 2 or 5 GHz instantaneous bandwidth, respectively, centered at around 36.5 GHz. In the receive mode, the input P1dB is 16 dBm per channel (IIP3 of 5.9 dBm), and in the transmit mode, the output P1dB is +4-5 dBm, all at 35-36 GHz. The measured isolation between the channels is better than 30 dB. The array maintained excellent phase characteristics up to 100 C with no change in the rms phase error. Also, ten different four-element phased arrays were tested (40 channels) and result in an rms gain variation of <0.5 dB at 34-39 GHz. The four-element array consumes 171 and 142 mW in the Tx and Rx modes from 1.8 V, and occupies an area of 2.0 ×2.02 mm2. To our knowledge, this is the smallest and lowest power consumption on-chip-band phased-array to-date.",
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Single and four-element Ka-band transmit/receive phased-array silicon RFICs with 5-bit amplitude and phase control. / Kang, Dong Woo; Kim, Jeong Geun; Min, Byung Wook; Rebeiz, Gabriel M.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 57, No. 12, 5313830, 01.12.2009, p. 3534-3543.

Research output: Contribution to journalArticle

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AU - Kang, Dong Woo

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AU - Min, Byung Wook

AU - Rebeiz, Gabriel M.

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AB - Ka-band SiGe BiCMOS single-and four-element phased arrays capable of both transmit and receive operation with 5-bit phase and amplitude control are presented. The design is based on the All-RF architecture with RF phase shifters and attenuators, and a 4:1 passive power combining/dividing network. The four-element array results in an average gain of ̃0 dB per channel and a noise figure of 9.0 dB, and is designed to be placed behind III-V T/R modules. The rms phase error is <5.6° (5-bit operation) and <12.5° (4-bit operation) over a 2 or 5 GHz instantaneous bandwidth, respectively, centered at around 36.5 GHz. In the receive mode, the input P1dB is 16 dBm per channel (IIP3 of 5.9 dBm), and in the transmit mode, the output P1dB is +4-5 dBm, all at 35-36 GHz. The measured isolation between the channels is better than 30 dB. The array maintained excellent phase characteristics up to 100 C with no change in the rms phase error. Also, ten different four-element phased arrays were tested (40 channels) and result in an rms gain variation of <0.5 dB at 34-39 GHz. The four-element array consumes 171 and 142 mW in the Tx and Rx modes from 1.8 V, and occupies an area of 2.0 ×2.02 mm2. To our knowledge, this is the smallest and lowest power consumption on-chip-band phased-array to-date.

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