Single- and multi-directional slanted plasma etching of silicon under practical plasma processing conditions

Sung Woon Cho, Jun Hyun Kim, Doo Won Kang, Kangtaek Lee, Chang Koo Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)


A novel plasma etching technique was developed to obtain single- and multi-directional slanted etch profiles of silicon using a Faraday cage system. Etching was performed by a cyclic process consisting of alternating etching and deposition steps using SF6 and C4F8 plasmas, respectively, under practical plasma processing conditions. The single-directional slanted plasma etching was achieved using a Faraday cage with a single horizontal grid plane. Mask erosion characteristics played an important role in the prediction and control of the etch profiles during the single-directional slanted plasma etching. Multi-directional, such as double and quadruple, slanted plasma etchings were also performed with Faraday cages with two and four slanted-grid planes, respectively. This work offers a novel method for performing single- and multi-directional slanted plasma etchings of silicon under practical plasma processing conditions.

Original languageEnglish
Pages (from-to)Q215-Q220
JournalECS Journal of Solid State Science and Technology
Issue number11
Publication statusPublished - 2014 Jan 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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