Abstract
A novel plasma etching technique was developed to obtain single- and multi-directional slanted etch profiles of silicon using a Faraday cage system. Etching was performed by a cyclic process consisting of alternating etching and deposition steps using SF6 and C4F8 plasmas, respectively, under practical plasma processing conditions. The single-directional slanted plasma etching was achieved using a Faraday cage with a single horizontal grid plane. Mask erosion characteristics played an important role in the prediction and control of the etch profiles during the single-directional slanted plasma etching. Multi-directional, such as double and quadruple, slanted plasma etchings were also performed with Faraday cages with two and four slanted-grid planes, respectively. This work offers a novel method for performing single- and multi-directional slanted plasma etchings of silicon under practical plasma processing conditions.
| Original language | English |
|---|---|
| Pages (from-to) | Q215-Q220 |
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 3 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
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Single- and multi-directional slanted plasma etching of silicon under practical plasma processing conditions. / Cho, Sung Woon; Kim, Jun Hyun; Kang, Doo Won; Lee, Kangtaek; Kim, Chang Koo.
In: ECS Journal of Solid State Science and Technology, Vol. 3, No. 11, 01.01.2014, p. Q215-Q220.Research output: Contribution to journal › Article
TY - JOUR
T1 - Single- and multi-directional slanted plasma etching of silicon under practical plasma processing conditions
AU - Cho, Sung Woon
AU - Kim, Jun Hyun
AU - Kang, Doo Won
AU - Lee, Kangtaek
AU - Kim, Chang Koo
PY - 2014/1/1
Y1 - 2014/1/1
N2 - A novel plasma etching technique was developed to obtain single- and multi-directional slanted etch profiles of silicon using a Faraday cage system. Etching was performed by a cyclic process consisting of alternating etching and deposition steps using SF6 and C4F8 plasmas, respectively, under practical plasma processing conditions. The single-directional slanted plasma etching was achieved using a Faraday cage with a single horizontal grid plane. Mask erosion characteristics played an important role in the prediction and control of the etch profiles during the single-directional slanted plasma etching. Multi-directional, such as double and quadruple, slanted plasma etchings were also performed with Faraday cages with two and four slanted-grid planes, respectively. This work offers a novel method for performing single- and multi-directional slanted plasma etchings of silicon under practical plasma processing conditions.
AB - A novel plasma etching technique was developed to obtain single- and multi-directional slanted etch profiles of silicon using a Faraday cage system. Etching was performed by a cyclic process consisting of alternating etching and deposition steps using SF6 and C4F8 plasmas, respectively, under practical plasma processing conditions. The single-directional slanted plasma etching was achieved using a Faraday cage with a single horizontal grid plane. Mask erosion characteristics played an important role in the prediction and control of the etch profiles during the single-directional slanted plasma etching. Multi-directional, such as double and quadruple, slanted plasma etchings were also performed with Faraday cages with two and four slanted-grid planes, respectively. This work offers a novel method for performing single- and multi-directional slanted plasma etchings of silicon under practical plasma processing conditions.
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U2 - 10.1149/2.0091411jss
DO - 10.1149/2.0091411jss
M3 - Article
VL - 3
SP - Q215-Q220
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 11
ER -