Abstract
A novel plasma etching technique was developed to obtain single- and multi-directional slanted etch profiles of silicon using a Faraday cage system. Etching was performed by a cyclic process consisting of alternating etching and deposition steps using SF6 and C4F8 plasmas, respectively, under practical plasma processing conditions. The single-directional slanted plasma etching was achieved using a Faraday cage with a single horizontal grid plane. Mask erosion characteristics played an important role in the prediction and control of the etch profiles during the single-directional slanted plasma etching. Multi-directional, such as double and quadruple, slanted plasma etchings were also performed with Faraday cages with two and four slanted-grid planes, respectively. This work offers a novel method for performing single- and multi-directional slanted plasma etchings of silicon under practical plasma processing conditions.
Original language | English |
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Pages (from-to) | Q215-Q220 |
Journal | ECS Journal of Solid State Science and Technology |
Volume | 3 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2014 |
Bibliographical note
Publisher Copyright:© The Author(s) 2014.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials