The magneto- and optoelectronic properties of single-crystalline diluted magnetic semiconductor nanowires Ga1-xMnxN were analyzed. Spin-dependent electron transport from single-nanowire transistors indicated the homogeneous nature of the ferromagnetic nanowires. Nano-wire field-effect transistor (FET) structures were prepared by as-grown GaN:Mn nanowires to determine the type and concentration of carrier. It was shown that simple chloride-based transport approach to preparing single-crystalline GaN:Mn nanowires enables facile doping of transition-metal ions into GaN matrix within these 1D nanostructures.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering