Single-crystalline diluted magnetic semiconductor GaN:Mn nanowires

Heon Jin Choi, Han Kyu Seong, Joonyeon Chang, Kyeong Il Lee, Young Ju Park, Ju Jin Kim, Sang Kwon Lee, Rongrui He, Tevye Kuykendall, Peidong Yang

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Abstract

The magneto- and optoelectronic properties of single-crystalline diluted magnetic semiconductor nanowires Ga1-xMnxN were analyzed. Spin-dependent electron transport from single-nanowire transistors indicated the homogeneous nature of the ferromagnetic nanowires. Nano-wire field-effect transistor (FET) structures were prepared by as-grown GaN:Mn nanowires to determine the type and concentration of carrier. It was shown that simple chloride-based transport approach to preparing single-crystalline GaN:Mn nanowires enables facile doping of transition-metal ions into GaN matrix within these 1D nanostructures.

Original languageEnglish
Pages (from-to)1351-1356
Number of pages6
JournalAdvanced Materials
Volume17
Issue number11
DOIs
Publication statusPublished - 2005 Jun 6

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Choi, H. J., Seong, H. K., Chang, J., Lee, K. I., Park, Y. J., Kim, J. J., Lee, S. K., He, R., Kuykendall, T., & Yang, P. (2005). Single-crystalline diluted magnetic semiconductor GaN:Mn nanowires. Advanced Materials, 17(11), 1351-1356. https://doi.org/10.1002/adma.200401706