Single-crystalline silicon-based heterojunction photodiode arrays on flexible plastic substrates

Sangwook Lee; Juree Hong; Ja Hoon Koo; Seulah Lee; Kwanghyun Lee; Seongil Im; Taeyoon Lee

doi:10.1109/TED.2011.2162241

Single-crystalline silicon-based heterojunction photodiode arrays on flexible plastic substrates

Sangwook Lee, Juree Hong, Ja Hoon Koo, Seulah Lee, Kwanghyun Lee, Seongil Im, Taeyoon Lee

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A silicon-based photodiode array was fabricated on a flexible polyethylene terephthalate substrate using a transfer printing technique. A heterojunction structure composed of a 15-nm-thick highly doped hydrogenated amorphous-silicon (n⁺ a-Si:H) layer and a 3-μm-thick p-type single-crystal silicon (p c-Si) membrane layer was adopted as the active layer of the flexible photodiode. The highly ordered photodiode array formed on the flexible substrate exhibited superior stability in electrical properties under bent conditions with no mechanical deformation. The variation of the spectral quantum efficiency (QE) under short-wavelength light illumination (λ ≤ 580nm) was in excellent agreement with that of a heterojunction photodiode composed of a-Si:H and a bulk c-Si substrate. Relatively low QE values were observed under longer wavelength (λ ≥ 600 nm) illumination due to the finite thickness of the active layer. The C-V measurement results of the fabricated photodiode array were in accordance with the abrupt junction model. A closer inspection of the junction area of the device using high-resolution cross-sectional transmission micrograph exhibited an interface depth of 2 ± 0.5 nm, which is unavoidable in plasma-enhanced a-Si:H deposition processes.

Original language	English
Article number	5993528
Pages (from-to)	3329-3334
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	10
DOIs	https://doi.org/10.1109/TED.2011.2162241
Publication status	Published - 2011 Oct

Bibliographical note

Funding Information:
Manuscript received March 5, 2011; revised May 25, 2011 and July 5, 2011; accepted July 7, 2011. Date of publication August 22, 2011; date of current version September 21, 2011. This work was supported in part by the National Research Foundation of Korea under Grant 2010-50193, by the KARI–University Partnership Program, and by the Priority Research Centers Program of National Research Foundation of Korea of the Ministry of Education, Science and Technology under Grant 2009-0093823. The review of this paper was arranged by Editor A. G. Aberle.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2011.2162241

Cite this

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title = "Single-crystalline silicon-based heterojunction photodiode arrays on flexible plastic substrates",

abstract = "A silicon-based photodiode array was fabricated on a flexible polyethylene terephthalate substrate using a transfer printing technique. A heterojunction structure composed of a 15-nm-thick highly doped hydrogenated amorphous-silicon (n+ a-Si:H) layer and a 3-μm-thick p-type single-crystal silicon (p c-Si) membrane layer was adopted as the active layer of the flexible photodiode. The highly ordered photodiode array formed on the flexible substrate exhibited superior stability in electrical properties under bent conditions with no mechanical deformation. The variation of the spectral quantum efficiency (QE) under short-wavelength light illumination (λ ≤ 580nm) was in excellent agreement with that of a heterojunction photodiode composed of a-Si:H and a bulk c-Si substrate. Relatively low QE values were observed under longer wavelength (λ ≥ 600 nm) illumination due to the finite thickness of the active layer. The C-V measurement results of the fabricated photodiode array were in accordance with the abrupt junction model. A closer inspection of the junction area of the device using high-resolution cross-sectional transmission micrograph exhibited an interface depth of 2 ± 0.5 nm, which is unavoidable in plasma-enhanced a-Si:H deposition processes.",

author = "Sangwook Lee and Juree Hong and Koo, {Ja Hoon} and Seulah Lee and Kwanghyun Lee and Seongil Im and Taeyoon Lee",

note = "Funding Information: Manuscript received March 5, 2011; revised May 25, 2011 and July 5, 2011; accepted July 7, 2011. Date of publication August 22, 2011; date of current version September 21, 2011. This work was supported in part by the National Research Foundation of Korea under Grant 2010-50193, by the KARI–University Partnership Program, and by the Priority Research Centers Program of National Research Foundation of Korea of the Ministry of Education, Science and Technology under Grant 2009-0093823. The review of this paper was arranged by Editor A. G. Aberle.",

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AU - Im, Seongil

AU - Lee, Taeyoon

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N2 - A silicon-based photodiode array was fabricated on a flexible polyethylene terephthalate substrate using a transfer printing technique. A heterojunction structure composed of a 15-nm-thick highly doped hydrogenated amorphous-silicon (n+ a-Si:H) layer and a 3-μm-thick p-type single-crystal silicon (p c-Si) membrane layer was adopted as the active layer of the flexible photodiode. The highly ordered photodiode array formed on the flexible substrate exhibited superior stability in electrical properties under bent conditions with no mechanical deformation. The variation of the spectral quantum efficiency (QE) under short-wavelength light illumination (λ ≤ 580nm) was in excellent agreement with that of a heterojunction photodiode composed of a-Si:H and a bulk c-Si substrate. Relatively low QE values were observed under longer wavelength (λ ≥ 600 nm) illumination due to the finite thickness of the active layer. The C-V measurement results of the fabricated photodiode array were in accordance with the abrupt junction model. A closer inspection of the junction area of the device using high-resolution cross-sectional transmission micrograph exhibited an interface depth of 2 ± 0.5 nm, which is unavoidable in plasma-enhanced a-Si:H deposition processes.

AB - A silicon-based photodiode array was fabricated on a flexible polyethylene terephthalate substrate using a transfer printing technique. A heterojunction structure composed of a 15-nm-thick highly doped hydrogenated amorphous-silicon (n+ a-Si:H) layer and a 3-μm-thick p-type single-crystal silicon (p c-Si) membrane layer was adopted as the active layer of the flexible photodiode. The highly ordered photodiode array formed on the flexible substrate exhibited superior stability in electrical properties under bent conditions with no mechanical deformation. The variation of the spectral quantum efficiency (QE) under short-wavelength light illumination (λ ≤ 580nm) was in excellent agreement with that of a heterojunction photodiode composed of a-Si:H and a bulk c-Si substrate. Relatively low QE values were observed under longer wavelength (λ ≥ 600 nm) illumination due to the finite thickness of the active layer. The C-V measurement results of the fabricated photodiode array were in accordance with the abrupt junction model. A closer inspection of the junction area of the device using high-resolution cross-sectional transmission micrograph exhibited an interface depth of 2 ± 0.5 nm, which is unavoidable in plasma-enhanced a-Si:H deposition processes.

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Single-crystalline silicon-based heterojunction photodiode arrays on flexible plastic substrates

Abstract

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