Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation with Enhanced Read Performance in 22-nm FinFET Technology

Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong Ook Jung

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Although near-threshold (Vth) operation is an attractive method for energy and performance-constrained applications, it suffers from problems in terms of circuit stability, particularly, for static random access memory (SRAM) cells. This brief proposes a near-Vth 9T SRAM cell implemented in a 22-nm FinFET technology. The read buffer of the proposed cell ensures read stability by decoupling the stored node from the read bit-line and improves read performance using a one-transistor read path. Energy and standby power are reduced by eliminating the sub-Vth leakage current in the read buffer. For accurate sensing yield estimation, a new yield-estimation method is also proposed, which considers the dynamic trip voltage. The proposed SRAM cell can achieve a minimum operating voltage of 0.3 V.

Original languageEnglish
Article number6963407
Pages (from-to)2748-2752
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume23
Issue number11
DOIs
Publication statusPublished - 2015 Nov

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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