Abstract
We report electronic transport properties of doped Ge-core/Si-shell and Si-core/Ge-shell nanowires (NWs) from first-principles. We obtain single-impurity scattering properties of electrons and holes using density-functional methods for quantum conductance and then estimate charge-carrier mobilities considering multiple impurity scatterings. It is found that holes in the Ge-core/Si-shell NW with B-doped Si and electrons in the Si-core/Ge-shell NW with P-doped Ge have higher mobilities than holes and electrons in other chemical and doping configurations. These results reflect asymmetric radial confinements of charge carriers in the core-shell NWs and show that Si-core/Ge-shell NWs with electron donors in the shell are as promising for nanoelectronic devices as Ge-core/Si-shell NWs with electron acceptors in the shell.
| Original language | English |
|---|---|
| Pages (from-to) | 2207-2210 |
| Number of pages | 4 |
| Journal | Nano letters |
| Volume | 10 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2010 Jun 9 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
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Single-impurity scattering and carrier mobility in doped Ge/Si core-shell nanowires. / Lee, Hyungjun; Choi, Hyoung Joon.
In: Nano letters, Vol. 10, No. 6, 09.06.2010, p. 2207-2210.Research output: Contribution to journal › Article
TY - JOUR
T1 - Single-impurity scattering and carrier mobility in doped Ge/Si core-shell nanowires
AU - Lee, Hyungjun
AU - Choi, Hyoung Joon
PY - 2010/6/9
Y1 - 2010/6/9
N2 - We report electronic transport properties of doped Ge-core/Si-shell and Si-core/Ge-shell nanowires (NWs) from first-principles. We obtain single-impurity scattering properties of electrons and holes using density-functional methods for quantum conductance and then estimate charge-carrier mobilities considering multiple impurity scatterings. It is found that holes in the Ge-core/Si-shell NW with B-doped Si and electrons in the Si-core/Ge-shell NW with P-doped Ge have higher mobilities than holes and electrons in other chemical and doping configurations. These results reflect asymmetric radial confinements of charge carriers in the core-shell NWs and show that Si-core/Ge-shell NWs with electron donors in the shell are as promising for nanoelectronic devices as Ge-core/Si-shell NWs with electron acceptors in the shell.
AB - We report electronic transport properties of doped Ge-core/Si-shell and Si-core/Ge-shell nanowires (NWs) from first-principles. We obtain single-impurity scattering properties of electrons and holes using density-functional methods for quantum conductance and then estimate charge-carrier mobilities considering multiple impurity scatterings. It is found that holes in the Ge-core/Si-shell NW with B-doped Si and electrons in the Si-core/Ge-shell NW with P-doped Ge have higher mobilities than holes and electrons in other chemical and doping configurations. These results reflect asymmetric radial confinements of charge carriers in the core-shell NWs and show that Si-core/Ge-shell NWs with electron donors in the shell are as promising for nanoelectronic devices as Ge-core/Si-shell NWs with electron acceptors in the shell.
UR - http://www.scopus.com/inward/record.url?scp=77953318799&partnerID=8YFLogxK
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U2 - 10.1021/nl101109p
DO - 10.1021/nl101109p
M3 - Article
C2 - 20499894
AN - SCOPUS:77953318799
VL - 10
SP - 2207
EP - 2210
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 6
ER -