Single-impurity scattering and carrier mobility in doped Ge/Si core-shell nanowires

Hyungjun Lee, Hyoung Joon Choi

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We report electronic transport properties of doped Ge-core/Si-shell and Si-core/Ge-shell nanowires (NWs) from first-principles. We obtain single-impurity scattering properties of electrons and holes using density-functional methods for quantum conductance and then estimate charge-carrier mobilities considering multiple impurity scatterings. It is found that holes in the Ge-core/Si-shell NW with B-doped Si and electrons in the Si-core/Ge-shell NW with P-doped Ge have higher mobilities than holes and electrons in other chemical and doping configurations. These results reflect asymmetric radial confinements of charge carriers in the core-shell NWs and show that Si-core/Ge-shell NWs with electron donors in the shell are as promising for nanoelectronic devices as Ge-core/Si-shell NWs with electron acceptors in the shell.

Original languageEnglish
Pages (from-to)2207-2210
Number of pages4
JournalNano letters
Volume10
Issue number6
DOIs
Publication statusPublished - 2010 Jun 9

Fingerprint

Carrier mobility
carrier mobility
Nanowires
nanowires
Scattering
Impurities
impurities
scattering
Electrons
Charge carriers
charge carriers
electrons
Plasma confinement
Hole mobility
Nanoelectronics
Electron mobility
Transport properties
hole mobility
electron mobility
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

@article{d07c4ef9b34d4e7f9fadbab1958ce985,
title = "Single-impurity scattering and carrier mobility in doped Ge/Si core-shell nanowires",
abstract = "We report electronic transport properties of doped Ge-core/Si-shell and Si-core/Ge-shell nanowires (NWs) from first-principles. We obtain single-impurity scattering properties of electrons and holes using density-functional methods for quantum conductance and then estimate charge-carrier mobilities considering multiple impurity scatterings. It is found that holes in the Ge-core/Si-shell NW with B-doped Si and electrons in the Si-core/Ge-shell NW with P-doped Ge have higher mobilities than holes and electrons in other chemical and doping configurations. These results reflect asymmetric radial confinements of charge carriers in the core-shell NWs and show that Si-core/Ge-shell NWs with electron donors in the shell are as promising for nanoelectronic devices as Ge-core/Si-shell NWs with electron acceptors in the shell.",
author = "Hyungjun Lee and Choi, {Hyoung Joon}",
year = "2010",
month = "6",
day = "9",
doi = "10.1021/nl101109p",
language = "English",
volume = "10",
pages = "2207--2210",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "6",

}

Single-impurity scattering and carrier mobility in doped Ge/Si core-shell nanowires. / Lee, Hyungjun; Choi, Hyoung Joon.

In: Nano letters, Vol. 10, No. 6, 09.06.2010, p. 2207-2210.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Single-impurity scattering and carrier mobility in doped Ge/Si core-shell nanowires

AU - Lee, Hyungjun

AU - Choi, Hyoung Joon

PY - 2010/6/9

Y1 - 2010/6/9

N2 - We report electronic transport properties of doped Ge-core/Si-shell and Si-core/Ge-shell nanowires (NWs) from first-principles. We obtain single-impurity scattering properties of electrons and holes using density-functional methods for quantum conductance and then estimate charge-carrier mobilities considering multiple impurity scatterings. It is found that holes in the Ge-core/Si-shell NW with B-doped Si and electrons in the Si-core/Ge-shell NW with P-doped Ge have higher mobilities than holes and electrons in other chemical and doping configurations. These results reflect asymmetric radial confinements of charge carriers in the core-shell NWs and show that Si-core/Ge-shell NWs with electron donors in the shell are as promising for nanoelectronic devices as Ge-core/Si-shell NWs with electron acceptors in the shell.

AB - We report electronic transport properties of doped Ge-core/Si-shell and Si-core/Ge-shell nanowires (NWs) from first-principles. We obtain single-impurity scattering properties of electrons and holes using density-functional methods for quantum conductance and then estimate charge-carrier mobilities considering multiple impurity scatterings. It is found that holes in the Ge-core/Si-shell NW with B-doped Si and electrons in the Si-core/Ge-shell NW with P-doped Ge have higher mobilities than holes and electrons in other chemical and doping configurations. These results reflect asymmetric radial confinements of charge carriers in the core-shell NWs and show that Si-core/Ge-shell NWs with electron donors in the shell are as promising for nanoelectronic devices as Ge-core/Si-shell NWs with electron acceptors in the shell.

UR - http://www.scopus.com/inward/record.url?scp=77953318799&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953318799&partnerID=8YFLogxK

U2 - 10.1021/nl101109p

DO - 10.1021/nl101109p

M3 - Article

C2 - 20499894

AN - SCOPUS:77953318799

VL - 10

SP - 2207

EP - 2210

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 6

ER -