Single metal gate with dual work functions for FD-SOI and UTB double gate technologies

Daniel Pham, Hongfa Luan, Kaveri Mathur, Barry Sassman, Billy Nguyen, George Brown, Ji Woon Yang, Jungwoo Oh, Peter Zeitzoff, Larry Larson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, we demonstrate an integratable single metal gate (TiSiN) on HfSixOy, with dual work functions (4.44eV and 4.83eV), achieved by varying the metal thickness. These structures may be used for FD-SOI and double gate ultra-thin body devices. Close to symmetric Vt is achieved: 0.32V and -0.37V for long channel FD-SOI nMOS and pMOS devices, respectively. The device shows good sub-threshold slope values, as low as 62mV/dec and 75mV/dec for 1μm and 0.2μm devices, respectively.

Original languageEnglish
Title of host publication2006 IEEE international SOI Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages25-26
Number of pages2
ISBN (Print)1424402905, 9781424402908
DOIs
Publication statusPublished - 2006 Jan 1
Event2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States
Duration: 2006 Oct 22006 Oct 5

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2006 IEEE International Silicon on Insulator Conference, SOI
CountryUnited States
CityNiagara Falls, NY
Period06/10/206/10/5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Pham, D., Luan, H., Mathur, K., Sassman, B., Nguyen, B., Brown, G., Yang, J. W., Oh, J., Zeitzoff, P., & Larson, L. (2006). Single metal gate with dual work functions for FD-SOI and UTB double gate technologies. In 2006 IEEE international SOI Conference Proceedings (pp. 25-26). [4062862] (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.2006.284414