TY - JOUR
T1 - SiO 2 film formed by inductivity coupled plasma chemical vapor deposition at low temperature for poly-Si TFT
AU - Jung, Ji Sim
AU - Kwon, Jang Yeon
AU - Park, Youngsoo
AU - Kim, Do Young
AU - Cho, Hans S.
AU - Park, Kyung Bae
AU - Xianyu, Wenxu
AU - Yin, Huaxiang
AU - Noguchi, Takashi
PY - 2004/12/1
Y1 - 2004/12/1
N2 - In this study, silicon dioxide (SiO 2) films were deposited at temperatures below 200°C by using the inductivity coupled plasma chemical vapor deposition (ICP CVD) technique, The breakdown electric field of as-deposited SiO 2 film by using this method shows values as high as 8.6 MV/cm. Additionally the effects of post-metallization annealing on SiO 2 were investigated. After 400°C annealing, the capacitance-voltage (C-V) characteristics such as flat-band voltage, and interface trap density are improved considerably. In TFTs fabricated on single crystal SOI substrates at low temperatures below 400°C by using this gate dielectric, a sharp gate voltage swing of 85 mV/dec. with high electron mobility was obtained. ICP CVD, by using high density plasma, can realize an excellent SiO 2 film and is expected to be applicable for the gate oxide in high performance Si TFT on plastic as well as on glass substrate.
AB - In this study, silicon dioxide (SiO 2) films were deposited at temperatures below 200°C by using the inductivity coupled plasma chemical vapor deposition (ICP CVD) technique, The breakdown electric field of as-deposited SiO 2 film by using this method shows values as high as 8.6 MV/cm. Additionally the effects of post-metallization annealing on SiO 2 were investigated. After 400°C annealing, the capacitance-voltage (C-V) characteristics such as flat-band voltage, and interface trap density are improved considerably. In TFTs fabricated on single crystal SOI substrates at low temperatures below 400°C by using this gate dielectric, a sharp gate voltage swing of 85 mV/dec. with high electron mobility was obtained. ICP CVD, by using high density plasma, can realize an excellent SiO 2 film and is expected to be applicable for the gate oxide in high performance Si TFT on plastic as well as on glass substrate.
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M3 - Article
AN - SCOPUS:12744276028
VL - 45
SP - S861-S863
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - SUPPL.
ER -