In this study, silicon dioxide (SiO 2) films were deposited at temperatures below 200°C by using the inductivity coupled plasma chemical vapor deposition (ICP CVD) technique, The breakdown electric field of as-deposited SiO 2 film by using this method shows values as high as 8.6 MV/cm. Additionally the effects of post-metallization annealing on SiO 2 were investigated. After 400°C annealing, the capacitance-voltage (C-V) characteristics such as flat-band voltage, and interface trap density are improved considerably. In TFTs fabricated on single crystal SOI substrates at low temperatures below 400°C by using this gate dielectric, a sharp gate voltage swing of 85 mV/dec. with high electron mobility was obtained. ICP CVD, by using high density plasma, can realize an excellent SiO 2 film and is expected to be applicable for the gate oxide in high performance Si TFT on plastic as well as on glass substrate.
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2004 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)