SiO 2 film formed by inductivity coupled plasma chemical vapor deposition at low temperature for poly-Si TFT

Ji Sim Jung, Jang Yeon Kwon, Youngsoo Park, Do Young Kim, Hans S. Cho, Kyung Bae Park, Wenxu Xianyu, Huaxiang Yin, Takashi Noguchi

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

In this study, silicon dioxide (SiO 2) films were deposited at temperatures below 200°C by using the inductivity coupled plasma chemical vapor deposition (ICP CVD) technique, The breakdown electric field of as-deposited SiO 2 film by using this method shows values as high as 8.6 MV/cm. Additionally the effects of post-metallization annealing on SiO 2 were investigated. After 400°C annealing, the capacitance-voltage (C-V) characteristics such as flat-band voltage, and interface trap density are improved considerably. In TFTs fabricated on single crystal SOI substrates at low temperatures below 400°C by using this gate dielectric, a sharp gate voltage swing of 85 mV/dec. with high electron mobility was obtained. ICP CVD, by using high density plasma, can realize an excellent SiO 2 film and is expected to be applicable for the gate oxide in high performance Si TFT on plastic as well as on glass substrate.

Original languageEnglish
Pages (from-to)S861-S863
JournalJournal of the Korean Physical Society
Volume45
Issue numberSUPPL.
Publication statusPublished - 2004 Dec 1

Fingerprint

vapor deposition
annealing
capacitance-voltage characteristics
SOI (semiconductors)
electric potential
electron mobility
plasma density
plastics
breakdown
traps
silicon dioxide
oxides
electric fields
glass
single crystals
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Jung, J. S., Kwon, J. Y., Park, Y., Kim, D. Y., Cho, H. S., Park, K. B., ... Noguchi, T. (2004). SiO 2 film formed by inductivity coupled plasma chemical vapor deposition at low temperature for poly-Si TFT. Journal of the Korean Physical Society, 45(SUPPL.), S861-S863.
Jung, Ji Sim ; Kwon, Jang Yeon ; Park, Youngsoo ; Kim, Do Young ; Cho, Hans S. ; Park, Kyung Bae ; Xianyu, Wenxu ; Yin, Huaxiang ; Noguchi, Takashi. / SiO 2 film formed by inductivity coupled plasma chemical vapor deposition at low temperature for poly-Si TFT. In: Journal of the Korean Physical Society. 2004 ; Vol. 45, No. SUPPL. pp. S861-S863.
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Jung, JS, Kwon, JY, Park, Y, Kim, DY, Cho, HS, Park, KB, Xianyu, W, Yin, H & Noguchi, T 2004, 'SiO 2 film formed by inductivity coupled plasma chemical vapor deposition at low temperature for poly-Si TFT', Journal of the Korean Physical Society, vol. 45, no. SUPPL., pp. S861-S863.

SiO 2 film formed by inductivity coupled plasma chemical vapor deposition at low temperature for poly-Si TFT. / Jung, Ji Sim; Kwon, Jang Yeon; Park, Youngsoo; Kim, Do Young; Cho, Hans S.; Park, Kyung Bae; Xianyu, Wenxu; Yin, Huaxiang; Noguchi, Takashi.

In: Journal of the Korean Physical Society, Vol. 45, No. SUPPL., 01.12.2004, p. S861-S863.

Research output: Contribution to journalArticle

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AU - Jung, Ji Sim

AU - Kwon, Jang Yeon

AU - Park, Youngsoo

AU - Kim, Do Young

AU - Cho, Hans S.

AU - Park, Kyung Bae

AU - Xianyu, Wenxu

AU - Yin, Huaxiang

AU - Noguchi, Takashi

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N2 - In this study, silicon dioxide (SiO 2) films were deposited at temperatures below 200°C by using the inductivity coupled plasma chemical vapor deposition (ICP CVD) technique, The breakdown electric field of as-deposited SiO 2 film by using this method shows values as high as 8.6 MV/cm. Additionally the effects of post-metallization annealing on SiO 2 were investigated. After 400°C annealing, the capacitance-voltage (C-V) characteristics such as flat-band voltage, and interface trap density are improved considerably. In TFTs fabricated on single crystal SOI substrates at low temperatures below 400°C by using this gate dielectric, a sharp gate voltage swing of 85 mV/dec. with high electron mobility was obtained. ICP CVD, by using high density plasma, can realize an excellent SiO 2 film and is expected to be applicable for the gate oxide in high performance Si TFT on plastic as well as on glass substrate.

AB - In this study, silicon dioxide (SiO 2) films were deposited at temperatures below 200°C by using the inductivity coupled plasma chemical vapor deposition (ICP CVD) technique, The breakdown electric field of as-deposited SiO 2 film by using this method shows values as high as 8.6 MV/cm. Additionally the effects of post-metallization annealing on SiO 2 were investigated. After 400°C annealing, the capacitance-voltage (C-V) characteristics such as flat-band voltage, and interface trap density are improved considerably. In TFTs fabricated on single crystal SOI substrates at low temperatures below 400°C by using this gate dielectric, a sharp gate voltage swing of 85 mV/dec. with high electron mobility was obtained. ICP CVD, by using high density plasma, can realize an excellent SiO 2 film and is expected to be applicable for the gate oxide in high performance Si TFT on plastic as well as on glass substrate.

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