SiO 2 film formed by inductivity coupled plasma chemical vapor deposition at low temperature for poly-Si TFT

Ji Sim Jung, Jang Yeon Kwon, Youngsoo Park, Do Young Kim, Hans S. Cho, Kyung Bae Park, Wenxu Xianyu, Huaxiang Yin, Takashi Noguchi

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23 Citations (Scopus)

Abstract

In this study, silicon dioxide (SiO 2) films were deposited at temperatures below 200°C by using the inductivity coupled plasma chemical vapor deposition (ICP CVD) technique, The breakdown electric field of as-deposited SiO 2 film by using this method shows values as high as 8.6 MV/cm. Additionally the effects of post-metallization annealing on SiO 2 were investigated. After 400°C annealing, the capacitance-voltage (C-V) characteristics such as flat-band voltage, and interface trap density are improved considerably. In TFTs fabricated on single crystal SOI substrates at low temperatures below 400°C by using this gate dielectric, a sharp gate voltage swing of 85 mV/dec. with high electron mobility was obtained. ICP CVD, by using high density plasma, can realize an excellent SiO 2 film and is expected to be applicable for the gate oxide in high performance Si TFT on plastic as well as on glass substrate.

Original languageEnglish
Pages (from-to)S861-S863
JournalJournal of the Korean Physical Society
Volume45
Issue numberSUPPL.
Publication statusPublished - 2004 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Jung, J. S., Kwon, J. Y., Park, Y., Kim, D. Y., Cho, H. S., Park, K. B., Xianyu, W., Yin, H., & Noguchi, T. (2004). SiO 2 film formed by inductivity coupled plasma chemical vapor deposition at low temperature for poly-Si TFT. Journal of the Korean Physical Society, 45(SUPPL.), S861-S863.