SiO ₂ film formed by inductivity coupled plasma chemical vapor deposition at low temperature for poly-Si TFT

In this study, silicon dioxide (SiO ₂) films were deposited at temperatures below 200°C by using the inductivity coupled plasma chemical vapor deposition (ICP CVD) technique, The breakdown electric field of as-deposited SiO ₂ film by using this method shows values as high as 8.6 MV/cm. Additionally the effects of post-metallization annealing on SiO ₂ were investigated. After 400°C annealing, the capacitance-voltage (C-V) characteristics such as flat-band voltage, and interface trap density are improved considerably. In TFTs fabricated on single crystal SOI substrates at low temperatures below 400°C by using this gate dielectric, a sharp gate voltage swing of 85 mV/dec. with high electron mobility was obtained. ICP CVD, by using high density plasma, can realize an excellent SiO ₂ film and is expected to be applicable for the gate oxide in high performance Si TFT on plastic as well as on glass substrate.