A low dielectric constant material for an intermetal dielectric (IMD) is imperative to reduce power dissipation, cross talk, and interconnection delay in the deep submicron device regime. SiO2 aerogel is one of the possible candidate with an inherent low dielectric constant. This article reports on the results of the successful fabrication of a SiO2 aerogel film as well as its material properties and electrical properties. Fundamental physical, chemical, and electrical material properties were evaluated for a SiO2 aerogel film before and after thermal treatment. An inherent low dielectric constant of 2.0 was realized for about 70% porosity of the SiO2 aerogel film and the leakage current density held at a level of 10-7 A/cm2. Preliminary results of the SiO2 aerogel film investigated in our study represent a very positive prospective to IMD applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)