This study examined the various physical, structural and electrical properties of SiO2 doped Ge2Sb2Te5 (SGST) films for phase change random access memory applications. Interestingly, SGST had a layered structure (LS) resulting from the inhomogeneous distribution of SiO2 after annealing. The physical parameters able to affect the reset current of phase change memory (Ires) were predicted from the Joule heating and heat conservation equations. When SiO2 was doped into GST, thermal conductivity largely decreased by ∼ 55%. The influence of SiO2-doping on Ires was examined using the test phase change memory cell. Ires was reduced by ∼ 45%. An electro-thermal simulation showed that the reduced thermal conductivity contributes to the improvement of cell efficiency as well as the reduction of Ires, while the increased dynamic resistance contributes only to the latter. The formation and presence of the LS thermal conductivity in the set state test cell after repeated switching was confirmed.
|Publication status||Published - 2011 Jun 24|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering