Si/Si1-xGex/Si Heterojunction PIN nanowires fabricated by using an aqueous electroless etching method

Hyonik Lee, Min Su Kim, Jungmok Seo, Ja Hoon Koo, Taeyoon Lee, Edward Namkyu Cho, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The p+ poly-silicon/silicon-germanium/n+ single-crystal silicon (Si/Si1-xGex/Si) PIN heterojunction nanowires (NWs) were fabricated by using the aqueous electroless etching (AEE) method. The synthesized NWs were highly aligned in the vertical direction with uniform lengths of approximately 5 μm. Three distinguishable peaks of Si1-xGex (400), with values of x corresponding to 11.8, 16.8, and 22.2%, were clearly observed in the X-ray diffraction (XRD) pattern for the NW structures, which confirms that heterojunction NWs were successfully synthesized. Noticeably, the photo response of the photodiodes (PDs) fabricated using the heterojunction NWs was greatly increased compared to that of the bulk-based PDs. Specifically, a dramatic decrease in the dark current by three orders of magnitude was observed for the heterojunction NW-based PDs. Thus, a clear distinction of four orders of magnitude between the off-currents under the dark and light conditions was observed in the reverse bias region for the NW-based PDs whereas in bulk-based PDs the current levels differed by less than one order of magnitude.

Original languageEnglish
Pages (from-to)501-504
Number of pages4
JournalJournal of the Korean Physical Society
Volume59
Issue number21
DOIs
Publication statusPublished - 2011 Aug 12

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heterojunctions
nanowires
etching
photodiodes
silicon
dark current
germanium
diffraction patterns
single crystals
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{a428f3a374bc4a6cbfdee700bbbbe8f3,
title = "Si/Si1-xGex/Si Heterojunction PIN nanowires fabricated by using an aqueous electroless etching method",
abstract = "The p+ poly-silicon/silicon-germanium/n+ single-crystal silicon (Si/Si1-xGex/Si) PIN heterojunction nanowires (NWs) were fabricated by using the aqueous electroless etching (AEE) method. The synthesized NWs were highly aligned in the vertical direction with uniform lengths of approximately 5 μm. Three distinguishable peaks of Si1-xGex (400), with values of x corresponding to 11.8, 16.8, and 22.2{\%}, were clearly observed in the X-ray diffraction (XRD) pattern for the NW structures, which confirms that heterojunction NWs were successfully synthesized. Noticeably, the photo response of the photodiodes (PDs) fabricated using the heterojunction NWs was greatly increased compared to that of the bulk-based PDs. Specifically, a dramatic decrease in the dark current by three orders of magnitude was observed for the heterojunction NW-based PDs. Thus, a clear distinction of four orders of magnitude between the off-currents under the dark and light conditions was observed in the reverse bias region for the NW-based PDs whereas in bulk-based PDs the current levels differed by less than one order of magnitude.",
author = "Hyonik Lee and Kim, {Min Su} and Jungmok Seo and Koo, {Ja Hoon} and Taeyoon Lee and Cho, {Edward Namkyu} and Ilgu Yun",
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Si/Si1-xGex/Si Heterojunction PIN nanowires fabricated by using an aqueous electroless etching method. / Lee, Hyonik; Kim, Min Su; Seo, Jungmok; Koo, Ja Hoon; Lee, Taeyoon; Cho, Edward Namkyu; Yun, Ilgu.

In: Journal of the Korean Physical Society, Vol. 59, No. 21, 12.08.2011, p. 501-504.

Research output: Contribution to journalArticle

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AU - Lee, Hyonik

AU - Kim, Min Su

AU - Seo, Jungmok

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AU - Lee, Taeyoon

AU - Cho, Edward Namkyu

AU - Yun, Ilgu

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