Abstract
The p+ poly-silicon/silicon-germanium/n+ single-crystal silicon (Si/Si1-xGex/Si) PIN heterojunction nanowires (NWs) were fabricated by using the aqueous electroless etching (AEE) method. The synthesized NWs were highly aligned in the vertical direction with uniform lengths of approximately 5 μm. Three distinguishable peaks of Si1-xGex (400), with values of x corresponding to 11.8, 16.8, and 22.2%, were clearly observed in the X-ray diffraction (XRD) pattern for the NW structures, which confirms that heterojunction NWs were successfully synthesized. Noticeably, the photo response of the photodiodes (PDs) fabricated using the heterojunction NWs was greatly increased compared to that of the bulk-based PDs. Specifically, a dramatic decrease in the dark current by three orders of magnitude was observed for the heterojunction NW-based PDs. Thus, a clear distinction of four orders of magnitude between the off-currents under the dark and light conditions was observed in the reverse bias region for the NW-based PDs whereas in bulk-based PDs the current levels differed by less than one order of magnitude.
| Original language | English |
|---|---|
| Pages (from-to) | 501-504 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 59 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2011 Aug 12 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
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Si/Si1-xGex/Si Heterojunction PIN nanowires fabricated by using an aqueous electroless etching method. / Lee, Hyonik; Kim, Min Su; Seo, Jungmok; Koo, Ja Hoon; Lee, Taeyoon; Cho, Edward Namkyu; Yun, Ilgu.
In: Journal of the Korean Physical Society, Vol. 59, No. 21, 12.08.2011, p. 501-504.Research output: Contribution to journal › Article
TY - JOUR
T1 - Si/Si1-xGex/Si Heterojunction PIN nanowires fabricated by using an aqueous electroless etching method
AU - Lee, Hyonik
AU - Kim, Min Su
AU - Seo, Jungmok
AU - Koo, Ja Hoon
AU - Lee, Taeyoon
AU - Cho, Edward Namkyu
AU - Yun, Ilgu
PY - 2011/8/12
Y1 - 2011/8/12
N2 - The p+ poly-silicon/silicon-germanium/n+ single-crystal silicon (Si/Si1-xGex/Si) PIN heterojunction nanowires (NWs) were fabricated by using the aqueous electroless etching (AEE) method. The synthesized NWs were highly aligned in the vertical direction with uniform lengths of approximately 5 μm. Three distinguishable peaks of Si1-xGex (400), with values of x corresponding to 11.8, 16.8, and 22.2%, were clearly observed in the X-ray diffraction (XRD) pattern for the NW structures, which confirms that heterojunction NWs were successfully synthesized. Noticeably, the photo response of the photodiodes (PDs) fabricated using the heterojunction NWs was greatly increased compared to that of the bulk-based PDs. Specifically, a dramatic decrease in the dark current by three orders of magnitude was observed for the heterojunction NW-based PDs. Thus, a clear distinction of four orders of magnitude between the off-currents under the dark and light conditions was observed in the reverse bias region for the NW-based PDs whereas in bulk-based PDs the current levels differed by less than one order of magnitude.
AB - The p+ poly-silicon/silicon-germanium/n+ single-crystal silicon (Si/Si1-xGex/Si) PIN heterojunction nanowires (NWs) were fabricated by using the aqueous electroless etching (AEE) method. The synthesized NWs were highly aligned in the vertical direction with uniform lengths of approximately 5 μm. Three distinguishable peaks of Si1-xGex (400), with values of x corresponding to 11.8, 16.8, and 22.2%, were clearly observed in the X-ray diffraction (XRD) pattern for the NW structures, which confirms that heterojunction NWs were successfully synthesized. Noticeably, the photo response of the photodiodes (PDs) fabricated using the heterojunction NWs was greatly increased compared to that of the bulk-based PDs. Specifically, a dramatic decrease in the dark current by three orders of magnitude was observed for the heterojunction NW-based PDs. Thus, a clear distinction of four orders of magnitude between the off-currents under the dark and light conditions was observed in the reverse bias region for the NW-based PDs whereas in bulk-based PDs the current levels differed by less than one order of magnitude.
UR - http://www.scopus.com/inward/record.url?scp=79961242015&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79961242015&partnerID=8YFLogxK
U2 - 10.3938/jkps.59.501
DO - 10.3938/jkps.59.501
M3 - Article
AN - SCOPUS:79961242015
VL - 59
SP - 501
EP - 504
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 21
ER -