Size and shape effect of SiC source/drain on strained Si

D. S. Byeon, S. W. Kim, D. H. Ko

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Strained Si is used to enhance carrier mobility in MOSFET devices. Epi-grown Si1-xCxas a source/drain induces strain on a channel because its lattice constant is smaller than Si. The distribution of stress varies with the layout of the device and can involve gate length, source/drain width, elevation height, etc. In this work, we report on how these parameters effect channel strain by employing the Finite Element Method. A 3-dimensional model and anisotropic properties such as the elastic constant and Poisson's ratio were adopted for high accuracy. Si0.983C0.017was used as the source/drain on a Si substrate. The lateral channel strain was calculated based on a 30∼90 nm gate length, a 30∼90 nm source/drain width and 0∼30 nm elevated source/drain shapes. The results showed that, when the gate length is longer, the channel strain is lower. On the other hand, source/drain width affects channel strain in a reverse manner. For models with the same gate length and source/drain width: 30, 60, 90 nm, the average channel strain is lower when the gate length and source/drain width are shorter. An additional parameter, namely, source/drain elevation height, was also studied. Interestingly, the effect of elevated shape is dependent on gate length and source/drain width.

Original languageEnglish
Pages (from-to)7679-7682
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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