Size distribution effects on self-assembled InAs quantum dots

S. I. Jung; H. Y. Yeo; I. Yun; J. Y. Leem; I. K. Han; J. S. Kim; J. I. Lee

doi:10.1007/s10854-007-9205-9

Size distribution effects on self-assembled InAs quantum dots

S. I. Jung, H. Y. Yeo, I. Yun, J. Y. Leem, I. K. Han, J. S. Kim, J. I. Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

Original language	English
Pages (from-to)	191-194
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	18
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/s10854-007-9205-9
Publication status	Published - 2007 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1007/s10854-007-9205-9

Cite this

@article{67ec292fe7304d35b34cf23974f698d7,

title = "Size distribution effects on self-assembled InAs quantum dots",

abstract = "We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.",

author = "Jung, {S. I.} and Yeo, {H. Y.} and I. Yun and Leem, {J. Y.} and Han, {I. K.} and Kim, {J. S.} and Lee, {J. I.}",

year = "2007",

month = oct,

doi = "10.1007/s10854-007-9205-9",

language = "English",

volume = "18",

pages = "191--194",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Size distribution effects on self-assembled InAs quantum dots

AU - Jung, S. I.

AU - Yeo, H. Y.

AU - Yun, I.

AU - Leem, J. Y.

AU - Han, I. K.

AU - Kim, J. S.

AU - Lee, J. I.

PY - 2007/10

Y1 - 2007/10

N2 - We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

AB - We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=34547590341&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547590341&partnerID=8YFLogxK

U2 - 10.1007/s10854-007-9205-9

DO - 10.1007/s10854-007-9205-9

M3 - Article

AN - SCOPUS:34547590341

VL - 18

SP - 191

EP - 194

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - SUPPL. 1

ER -

Size distribution effects on self-assembled InAs quantum dots

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this