Abstract
We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 191-194 |
| Number of pages | 4 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 18 |
| Issue number | SUPPL. 1 |
| DOIs | |
| Publication status | Published - 2007 Oct |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Jung, S. I., Yeo, H. Y., Yun, I., Leem, J. Y., Han, I. K., Kim, J. S., & Lee, J. I. (2007). Size distribution effects on self-assembled InAs quantum dots. Journal of Materials Science: Materials in Electronics, 18(SUPPL. 1), 191-194. https://doi.org/10.1007/s10854-007-9205-9