Size distribution effects on self-assembled InAs quantum dots

S. I. Jung, H. Y. Yeo, I. Yun, J. Y. Leem, I. K. Han, J. S. Kim, J. I. Lee

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Abstract

We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

Original languageEnglish
Pages (from-to)191-194
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume18
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2007 Oct 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Jung, S. I., Yeo, H. Y., Yun, I., Leem, J. Y., Han, I. K., Kim, J. S., & Lee, J. I. (2007). Size distribution effects on self-assembled InAs quantum dots. Journal of Materials Science: Materials in Electronics, 18(SUPPL. 1), 191-194. https://doi.org/10.1007/s10854-006-9016-4