Smicroscopic origins of electron and hole stability in ZnO

C. Richard A. Catlow; Alexey A. Sokol; Aron Walsh

doi:10.1039/c1cc10314h

Smicroscopic origins of electron and hole stability in ZnO

C. Richard A. Catlow, Alexey A. Sokol, Aron Walsh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.

Original language	English
Pages (from-to)	3386-3388
Number of pages	3
Journal	Chemical Communications
Volume	47
Issue number	12
DOIs	https://doi.org/10.1039/c1cc10314h
Publication status	Published - 2011 Mar 8

All Science Journal Classification (ASJC) codes

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Smicroscopic origins of electron and hole stability in ZnO",

abstract = "We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.",

author = "Catlow, {C. Richard A.} and Sokol, {Alexey A.} and Aron Walsh",

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AU - Catlow, C. Richard A.

AU - Sokol, Alexey A.

AU - Walsh, Aron

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JO - Chemical Communications

JF - Chemical Communications

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Smicroscopic origins of electron and hole stability in ZnO

Abstract

All Science Journal Classification (ASJC) codes

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