Sn doping in thermoelectric Bi 2 Te 3 films by metal-organic chemical vapor deposition

Kwang Chon Kim, Beomjin Kwon, Hyun Jae Kim, Seung Hyub Baek, Dow Bin Hyun, Seong Keun Kim, Jin Sang Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Sn-doped Bi 2 Te 3 films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi 2 Te 3 films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi 2 Te 3 films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi 2 Te 3 films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H 2 carrier gas. In particular, the hole concentration varied over a range of 1-5 × 10 19 /cm 3 in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi 2 Te 3 films was possible using all alkyl-based precursors.

Original languageEnglish
Pages (from-to)232-237
Number of pages6
JournalApplied Surface Science
Volume353
DOIs
Publication statusPublished - 2015 Oct 30

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Organic Chemicals
Organic chemicals
Chemical vapor deposition
Hole concentration
Metals
Doping (additives)
Seebeck coefficient
Tin
Thermoelectric power
Vapor pressure
Gases
Flow rate
Substrates

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Kim, Kwang Chon ; Kwon, Beomjin ; Kim, Hyun Jae ; Baek, Seung Hyub ; Hyun, Dow Bin ; Kim, Seong Keun ; Kim, Jin Sang. / Sn doping in thermoelectric Bi 2 Te 3 films by metal-organic chemical vapor deposition In: Applied Surface Science. 2015 ; Vol. 353. pp. 232-237.
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abstract = "Sn-doped Bi 2 Te 3 films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi 2 Te 3 films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi 2 Te 3 films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi 2 Te 3 films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H 2 carrier gas. In particular, the hole concentration varied over a range of 1-5 × 10 19 /cm 3 in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi 2 Te 3 films was possible using all alkyl-based precursors.",
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Sn doping in thermoelectric Bi 2 Te 3 films by metal-organic chemical vapor deposition . / Kim, Kwang Chon; Kwon, Beomjin; Kim, Hyun Jae; Baek, Seung Hyub; Hyun, Dow Bin; Kim, Seong Keun; Kim, Jin Sang.

In: Applied Surface Science, Vol. 353, 30.10.2015, p. 232-237.

Research output: Contribution to journalArticle

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T1 - Sn doping in thermoelectric Bi 2 Te 3 films by metal-organic chemical vapor deposition

AU - Kim, Kwang Chon

AU - Kwon, Beomjin

AU - Kim, Hyun Jae

AU - Baek, Seung Hyub

AU - Hyun, Dow Bin

AU - Kim, Seong Keun

AU - Kim, Jin Sang

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AB - Sn-doped Bi 2 Te 3 films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi 2 Te 3 films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi 2 Te 3 films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi 2 Te 3 films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H 2 carrier gas. In particular, the hole concentration varied over a range of 1-5 × 10 19 /cm 3 in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi 2 Te 3 films was possible using all alkyl-based precursors.

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