SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector

Jin Sung Youn, Myung Jae Lee, Kang Yeob Park, Holger Rücker, Woo-Young Choi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.

Original languageEnglish
Pages (from-to)900-907
Number of pages8
JournalOptics Express
Volume22
Issue number1
DOIs
Publication statusPublished - 2014 Jan 13

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avalanches
integrated circuits
photometers
signal to noise ratios
receivers
CMOS
silicon
buffers
amplifiers
analog circuits
bit error rate
direct current
output
electric potential

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Youn, Jin Sung ; Lee, Myung Jae ; Park, Kang Yeob ; Rücker, Holger ; Choi, Woo-Young. / SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector. In: Optics Express. 2014 ; Vol. 22, No. 1. pp. 900-907.
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SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector. / Youn, Jin Sung; Lee, Myung Jae; Park, Kang Yeob; Rücker, Holger; Choi, Woo-Young.

In: Optics Express, Vol. 22, No. 1, 13.01.2014, p. 900-907.

Research output: Contribution to journalArticle

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