SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector

Jin Sung Youn; Myung Jae Lee; Kang Yeob Park; Holger Rücker; Woo Young Choi

doi:10.1364/OE.22.000900

SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector

Jin Sung Youn, Myung Jae Lee, Kang Yeob Park, Holger Rücker, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.

Original language	English
Pages (from-to)	900-907
Number of pages	8
Journal	Optics Express
Volume	22
Issue number	1
DOIs	https://doi.org/10.1364/OE.22.000900
Publication status	Published - 2014 Jan 13

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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abstract = "We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.",

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AU - Rücker, Holger

AU - Choi, Woo Young

PY - 2014/1/13

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SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector

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