SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector

Jin Sung Youn, Myung Jae Lee, Kang Yeob Park, Holger Rücker, Woo Young Choi

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.

Original languageEnglish
Pages (from-to)900-907
Number of pages8
JournalOptics Express
Issue number1
Publication statusPublished - 2014 Jan 13

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics


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