Abstract
We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-films were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO films were uniform and have smooth surface morphology (rms. roughness ∼0.7 nm). The device performance of the solution-processed thin-film transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 °C showed clear switching behavior and output characteristic with relatively high field effect mobility (∼0.1 cm2/V·s) and low threshold voltage (∼5.4 V). Even when annealed at 300 °C, they showed reasonable field effect mobility (∼0.03 cm2/V·s) and a lower threshold voltage (∼-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 218-222 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 53 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2008 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
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Sol-gel derived Ga-Ln-Zn-O semiconductor layers for solution-processed thin-film transistors. / Koo, Chang Young; Kim, Dongjo; Jeong, Sunho; Moon, Joo Ho; Park, Chiyoung; Jeon, Minhyon; Sin, Won Chol; Jung, Jinha; Woo, Hyun Jung; Kim, Seung Hyun; Ha, Jowoong.
In: Journal of the Korean Physical Society, Vol. 53, No. 1, 01.01.2008, p. 218-222.Research output: Contribution to journal › Article
TY - JOUR
T1 - Sol-gel derived Ga-Ln-Zn-O semiconductor layers for solution-processed thin-film transistors
AU - Koo, Chang Young
AU - Kim, Dongjo
AU - Jeong, Sunho
AU - Moon, Joo Ho
AU - Park, Chiyoung
AU - Jeon, Minhyon
AU - Sin, Won Chol
AU - Jung, Jinha
AU - Woo, Hyun Jung
AU - Kim, Seung Hyun
AU - Ha, Jowoong
PY - 2008/1/1
Y1 - 2008/1/1
N2 - We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-films were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO films were uniform and have smooth surface morphology (rms. roughness ∼0.7 nm). The device performance of the solution-processed thin-film transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 °C showed clear switching behavior and output characteristic with relatively high field effect mobility (∼0.1 cm2/V·s) and low threshold voltage (∼5.4 V). Even when annealed at 300 °C, they showed reasonable field effect mobility (∼0.03 cm2/V·s) and a lower threshold voltage (∼-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.
AB - We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-films were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO films were uniform and have smooth surface morphology (rms. roughness ∼0.7 nm). The device performance of the solution-processed thin-film transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 °C showed clear switching behavior and output characteristic with relatively high field effect mobility (∼0.1 cm2/V·s) and low threshold voltage (∼5.4 V). Even when annealed at 300 °C, they showed reasonable field effect mobility (∼0.03 cm2/V·s) and a lower threshold voltage (∼-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.
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U2 - 10.3938/jkps.53.218
DO - 10.3938/jkps.53.218
M3 - Article
VL - 53
SP - 218
EP - 222
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 1
ER -