Sol-gel derived Ga-Ln-Zn-O semiconductor layers for solution-processed thin-film transistors

Chang Young Koo, Dongjo Kim, Sunho Jeong, Joo Ho Moon, Chiyoung Park, Minhyon Jeon, Won Chol Sin, Jinha Jung, Hyun Jung Woo, Seung Hyun Kim, Jowoong Ha

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-films were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO films were uniform and have smooth surface morphology (rms. roughness ∼0.7 nm). The device performance of the solution-processed thin-film transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 °C showed clear switching behavior and output characteristic with relatively high field effect mobility (∼0.1 cm2/V·s) and low threshold voltage (∼5.4 V). Even when annealed at 300 °C, they showed reasonable field effect mobility (∼0.03 cm2/V·s) and a lower threshold voltage (∼-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.

Original languageEnglish
Pages (from-to)218-222
Number of pages5
JournalJournal of the Korean Physical Society
Volume53
Issue number1
DOIs
Publication statusPublished - 2008 Jan 1

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transistors
gels
thin films
threshold voltage
low voltage
oxides
display devices
optoelectronic devices
coating
roughness
costs
annealing
output
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Koo, Chang Young ; Kim, Dongjo ; Jeong, Sunho ; Moon, Joo Ho ; Park, Chiyoung ; Jeon, Minhyon ; Sin, Won Chol ; Jung, Jinha ; Woo, Hyun Jung ; Kim, Seung Hyun ; Ha, Jowoong. / Sol-gel derived Ga-Ln-Zn-O semiconductor layers for solution-processed thin-film transistors. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 1. pp. 218-222.
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Koo, CY, Kim, D, Jeong, S, Moon, JH, Park, C, Jeon, M, Sin, WC, Jung, J, Woo, HJ, Kim, SH & Ha, J 2008, 'Sol-gel derived Ga-Ln-Zn-O semiconductor layers for solution-processed thin-film transistors', Journal of the Korean Physical Society, vol. 53, no. 1, pp. 218-222. https://doi.org/10.3938/jkps.53.218

Sol-gel derived Ga-Ln-Zn-O semiconductor layers for solution-processed thin-film transistors. / Koo, Chang Young; Kim, Dongjo; Jeong, Sunho; Moon, Joo Ho; Park, Chiyoung; Jeon, Minhyon; Sin, Won Chol; Jung, Jinha; Woo, Hyun Jung; Kim, Seung Hyun; Ha, Jowoong.

In: Journal of the Korean Physical Society, Vol. 53, No. 1, 01.01.2008, p. 218-222.

Research output: Contribution to journalArticle

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AU - Koo, Chang Young

AU - Kim, Dongjo

AU - Jeong, Sunho

AU - Moon, Joo Ho

AU - Park, Chiyoung

AU - Jeon, Minhyon

AU - Sin, Won Chol

AU - Jung, Jinha

AU - Woo, Hyun Jung

AU - Kim, Seung Hyun

AU - Ha, Jowoong

PY - 2008/1/1

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N2 - We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-films were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO films were uniform and have smooth surface morphology (rms. roughness ∼0.7 nm). The device performance of the solution-processed thin-film transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 °C showed clear switching behavior and output characteristic with relatively high field effect mobility (∼0.1 cm2/V·s) and low threshold voltage (∼5.4 V). Even when annealed at 300 °C, they showed reasonable field effect mobility (∼0.03 cm2/V·s) and a lower threshold voltage (∼-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.

AB - We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-films were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO films were uniform and have smooth surface morphology (rms. roughness ∼0.7 nm). The device performance of the solution-processed thin-film transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 °C showed clear switching behavior and output characteristic with relatively high field effect mobility (∼0.1 cm2/V·s) and low threshold voltage (∼5.4 V). Even when annealed at 300 °C, they showed reasonable field effect mobility (∼0.03 cm2/V·s) and a lower threshold voltage (∼-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.

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