Sol-gel derived Ga-Ln-Zn-O semiconductor layers for solution-processed thin-film transistors

Chang Young Koo, Dongjo Kim, Sunho Jeong, Joo Ho Moon, Chiyoung Park, Minhyon Jeon, Won Chol Sin, Jinha Jung, Hyun Jung Woo, Seung Hyun Kim, Jowoong Ha

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We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-films were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO films were uniform and have smooth surface morphology (rms. roughness ∼0.7 nm). The device performance of the solution-processed thin-film transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 °C showed clear switching behavior and output characteristic with relatively high field effect mobility (∼0.1 cm2/V·s) and low threshold voltage (∼5.4 V). Even when annealed at 300 °C, they showed reasonable field effect mobility (∼0.03 cm2/V·s) and a lower threshold voltage (∼-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.

Original languageEnglish
Pages (from-to)218-222
Number of pages5
JournalJournal of the Korean Physical Society
Issue number1
Publication statusPublished - 2008 Jan 1


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Koo, C. Y., Kim, D., Jeong, S., Moon, J. H., Park, C., Jeon, M., Sin, W. C., Jung, J., Woo, H. J., Kim, S. H., & Ha, J. (2008). Sol-gel derived Ga-Ln-Zn-O semiconductor layers for solution-processed thin-film transistors. Journal of the Korean Physical Society, 53(1), 218-222.