Solid phase crystallization (SPC) behavior of amorphous Si bilayer films with different concentration of oxygen: Surface vs. Interface-nucleation

M. K. Ryu, J. Y. Kwon, K. B. Kim

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Solid-phase crystallization (SPC) behavior of a-Si film [a-Si(II)] in which oxygen concentration (Co) is higher at the a-Si/SiO2 interface (Co=5×1021 /cm3) than at the film surface (C0=3×1020 /cm3) has been investigated. The results were also compared with that of a-Si single layer [a-Si(I), 600 Å] with C0=3×1020 /cm3. It has been found that the interface-nucleation was suppressed in the a-Si(II) and the surface-nucleation occurred to make a poly-Si/a-Si (300 Å/300 Å) bilayer structure. Many equiaxial grains with sizes of 1∼2 μm were formed in the surface-nucleated poly-Si layer. Compared with the results of conventional SPC poly-Si (600 Å-thick) in which elliptical grains with sizes of 0.5∼1 μm were formed by the interface (a-Si/SiO2)-nucleation, we concluded that the poly-Si/a-Si bilayer scheme is a method to improve the microstructure of SPC poly-Si film.

Original languageEnglish
Pages (from-to)Q631-Q636
JournalMaterials Research Society Symposium - Proceedings
Volume621
DOIs
Publication statusPublished - 2000 Jan 1
EventElectron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays - San Francisco, CA, United States
Duration: 2000 Apr 252000 Apr 27

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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