Solid state reactions in cobalt/amorphous-silicon multilayer thin films

Jae Yeob Shim, Joon Seop Kwak, Hong Koo Baik

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Solid state reactions in Co/amorphous-Si multilayer thin films were investigated using differential scanning calorimetry and X-ray diffraction. The results are compared with the predictions of effective driving force (EDF) and effective heat of formation (EHF) models. Amorphous silicide growth does not occur in Co/amorphous-Si multilayer thin films; this is consistent with the predictions of the EDF model. The first crystalline phase formed by solid state reaction is found to be CoSi, rather than Co2Si which is predicted by the EHF model to form first. The difference in the experimental and predicted first crystalline silicide is discussed. For Co:Si atomic concentration ratios of 2:1 and 1:2, the phase sequences are CoSi → Co2Si and CoSi → Co2Si → CoSi → CoSi2 respectively. These reactions are analyzed using the EHF diagram. The formation of CoSi and CoSi2 is controlled by nucleation and the activation energies for the formation of CoSi, Co2Si, and CoSi2 are 1.71, 2.34, and 2.79 eV respectively.

Original languageEnglish
Pages (from-to)309-314
Number of pages6
JournalThin Solid Films
Volume288
Issue number1-2
DOIs
Publication statusPublished - 1996 Nov 15

Fingerprint

Multilayer films
heat of formation
Cobalt
Amorphous silicon
Solid state reactions
amorphous silicon
cobalt
solid state
Thin films
thin films
Crystalline materials
predictions
Differential scanning calorimetry
Nucleation
heat measurement
Activation energy
diagrams
nucleation
activation energy
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Shim, Jae Yeob ; Kwak, Joon Seop ; Baik, Hong Koo. / Solid state reactions in cobalt/amorphous-silicon multilayer thin films. In: Thin Solid Films. 1996 ; Vol. 288, No. 1-2. pp. 309-314.
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Solid state reactions in cobalt/amorphous-silicon multilayer thin films. / Shim, Jae Yeob; Kwak, Joon Seop; Baik, Hong Koo.

In: Thin Solid Films, Vol. 288, No. 1-2, 15.11.1996, p. 309-314.

Research output: Contribution to journalArticle

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T1 - Solid state reactions in cobalt/amorphous-silicon multilayer thin films

AU - Shim, Jae Yeob

AU - Kwak, Joon Seop

AU - Baik, Hong Koo

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N2 - Solid state reactions in Co/amorphous-Si multilayer thin films were investigated using differential scanning calorimetry and X-ray diffraction. The results are compared with the predictions of effective driving force (EDF) and effective heat of formation (EHF) models. Amorphous silicide growth does not occur in Co/amorphous-Si multilayer thin films; this is consistent with the predictions of the EDF model. The first crystalline phase formed by solid state reaction is found to be CoSi, rather than Co2Si which is predicted by the EHF model to form first. The difference in the experimental and predicted first crystalline silicide is discussed. For Co:Si atomic concentration ratios of 2:1 and 1:2, the phase sequences are CoSi → Co2Si and CoSi → Co2Si → CoSi → CoSi2 respectively. These reactions are analyzed using the EHF diagram. The formation of CoSi and CoSi2 is controlled by nucleation and the activation energies for the formation of CoSi, Co2Si, and CoSi2 are 1.71, 2.34, and 2.79 eV respectively.

AB - Solid state reactions in Co/amorphous-Si multilayer thin films were investigated using differential scanning calorimetry and X-ray diffraction. The results are compared with the predictions of effective driving force (EDF) and effective heat of formation (EHF) models. Amorphous silicide growth does not occur in Co/amorphous-Si multilayer thin films; this is consistent with the predictions of the EDF model. The first crystalline phase formed by solid state reaction is found to be CoSi, rather than Co2Si which is predicted by the EHF model to form first. The difference in the experimental and predicted first crystalline silicide is discussed. For Co:Si atomic concentration ratios of 2:1 and 1:2, the phase sequences are CoSi → Co2Si and CoSi → Co2Si → CoSi → CoSi2 respectively. These reactions are analyzed using the EHF diagram. The formation of CoSi and CoSi2 is controlled by nucleation and the activation energies for the formation of CoSi, Co2Si, and CoSi2 are 1.71, 2.34, and 2.79 eV respectively.

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