Solid state reactions in cobalt/amorphous-silicon multilayer thin films

Jae Yeob Shim, Joon Seop Kwak, Hong Koo Baik

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13 Citations (Scopus)

Abstract

Solid state reactions in Co/amorphous-Si multilayer thin films were investigated using differential scanning calorimetry and X-ray diffraction. The results are compared with the predictions of effective driving force (EDF) and effective heat of formation (EHF) models. Amorphous silicide growth does not occur in Co/amorphous-Si multilayer thin films; this is consistent with the predictions of the EDF model. The first crystalline phase formed by solid state reaction is found to be CoSi, rather than Co2Si which is predicted by the EHF model to form first. The difference in the experimental and predicted first crystalline silicide is discussed. For Co:Si atomic concentration ratios of 2:1 and 1:2, the phase sequences are CoSi → Co2Si and CoSi → Co2Si → CoSi → CoSi2 respectively. These reactions are analyzed using the EHF diagram. The formation of CoSi and CoSi2 is controlled by nucleation and the activation energies for the formation of CoSi, Co2Si, and CoSi2 are 1.71, 2.34, and 2.79 eV respectively.

Original languageEnglish
Pages (from-to)309-314
Number of pages6
JournalThin Solid Films
Volume288
Issue number1-2
DOIs
Publication statusPublished - 1996 Nov 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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