Soluble polycyclosilane-polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

Sung Jin Park, Hyeon Mo Cho, Myong Euy Lee, Miyoung Kim, Kwenwoo Han, Seunghee Hong, Sanghak Lim, Hansong Lee, Byeonggyu Hwang, Sang Kyun Kim, Sangdeok Shim, Philjae Kang, Moon Gun Choi

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4 Citations (Scopus)

Abstract

A polycyclosilane precursor was synthesized to develop soluble silicon materials and silicon thin films with optical properties at 193 nm, high silicon content, and etch selectivity for O2 and CFx plasmas. A new class of polycyclosilane-polysiloxane hybrid materials and their thin films exhibited good etch selectivity and good optical properties at 193 nm without organic absorbents.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalJournal of Materials Chemistry C
Volume3
Issue number2
DOIs
Publication statusPublished - 2015 Jan 14

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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    Park, S. J., Cho, H. M., Lee, M. E., Kim, M., Han, K., Hong, S., Lim, S., Lee, H., Hwang, B., Kim, S. K., Shim, S., Kang, P., & Choi, M. G. (2015). Soluble polycyclosilane-polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity. Journal of Materials Chemistry C, 3(2), 239-242. https://doi.org/10.1039/c4tc01917b