Solution-deposited GdCeO x thin films

Microstructure, band structure, and dielectric property

Myung Soo Lee, Sang Han Park, Mann-Ho Cho, Hyoungsub Kim

Research output: Contribution to journalArticle

Abstract

The microstructural and electrical properties of solution-deposited GdCeO x dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd 2O 3 film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO x film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.

Original languageEnglish
Pages (from-to)1423-1427
Number of pages5
JournalMaterials Research Bulletin
Volume47
Issue number6
DOIs
Publication statusPublished - 2012 Jun 1

Fingerprint

Dielectric properties
Band structure
dielectric properties
Thin films
microstructure
Microstructure
Dielectric films
Electron energy loss spectroscopy
thin films
mixing ratios
Crystallization
Valence bands
Hysteresis
Refractive index
Electric properties
Energy gap
Permittivity
X ray photoelectron spectroscopy
energy dissipation
hysteresis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Myung Soo ; Park, Sang Han ; Cho, Mann-Ho ; Kim, Hyoungsub. / Solution-deposited GdCeO x thin films : Microstructure, band structure, and dielectric property. In: Materials Research Bulletin. 2012 ; Vol. 47, No. 6. pp. 1423-1427.
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Solution-deposited GdCeO x thin films : Microstructure, band structure, and dielectric property. / Lee, Myung Soo; Park, Sang Han; Cho, Mann-Ho; Kim, Hyoungsub.

In: Materials Research Bulletin, Vol. 47, No. 6, 01.06.2012, p. 1423-1427.

Research output: Contribution to journalArticle

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