The microstructural and electrical properties of solution-deposited GdCeO x dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd 2O 3 film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO x film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.
|Number of pages||5|
|Journal||Materials Research Bulletin|
|Publication status||Published - 2012 Jun|
Bibliographical noteFunding Information:
This work was supported by National Research Foundation of Korea Grant funded by the Korean Government ( 2011-0003814 ).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering