Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors

Wooseok Yang, Keunkyu Song, Yangho Jung, Sunho Jeong, Jooho Moon

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

Although high dielectric constant (k) oxide thin film has been considered as a key element for high performance and low-voltage driven thin-film transistors (TFTs), there are no solution processable high-k oxide dielectrics that satisfy the stringent requirements of low-temperature processability, mechanical flexibility, and good TFT performance. Here, we demonstrate that the incorporation of a zirconium component that has strong bonding to oxygen enables a significant reduction in the processing temperature for soluble alumina dielectrics to as low as 250 °C. Based on these Zr-AlOx films, high performance, low operational voltage, flexible TFTs are achieved. Flexible TFTs operate well under a gate bias of 5 V, exhibiting a high saturation mobility of 51 cm2 V-1 s-1, an on/off current ratio of 104, and a low threshold voltage of 1.2 V with good mechanical flexibility. This is the first study demonstrating the mechanical flexibility of all-oxide soluble high-k dielectric-semiconductor-based TFTs with an emphasis on the influence of annealing temperature on the solution-deposited high-k oxide dielectric characteristics.

Original languageEnglish
Pages (from-to)4275-4282
Number of pages8
JournalJournal of Materials Chemistry C
Volume1
Issue number27
DOIs
Publication statusPublished - 2013 Jul 21

Fingerprint

Gate dielectrics
Thin film transistors
Oxides
Aluminum Oxide
Electric potential
Threshold voltage
Zirconium
Temperature
Oxide films
Permittivity
Alumina
Annealing
Semiconductor materials
Oxygen
Thin films
Processing

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

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abstract = "Although high dielectric constant (k) oxide thin film has been considered as a key element for high performance and low-voltage driven thin-film transistors (TFTs), there are no solution processable high-k oxide dielectrics that satisfy the stringent requirements of low-temperature processability, mechanical flexibility, and good TFT performance. Here, we demonstrate that the incorporation of a zirconium component that has strong bonding to oxygen enables a significant reduction in the processing temperature for soluble alumina dielectrics to as low as 250 °C. Based on these Zr-AlOx films, high performance, low operational voltage, flexible TFTs are achieved. Flexible TFTs operate well under a gate bias of 5 V, exhibiting a high saturation mobility of 51 cm2 V-1 s-1, an on/off current ratio of 104, and a low threshold voltage of 1.2 V with good mechanical flexibility. This is the first study demonstrating the mechanical flexibility of all-oxide soluble high-k dielectric-semiconductor-based TFTs with an emphasis on the influence of annealing temperature on the solution-deposited high-k oxide dielectric characteristics.",
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Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors. / Yang, Wooseok; Song, Keunkyu; Jung, Yangho; Jeong, Sunho; Moon, Jooho.

In: Journal of Materials Chemistry C, Vol. 1, No. 27, 21.07.2013, p. 4275-4282.

Research output: Contribution to journalArticle

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