Solution-Derived Zn-Doped GaO Films as Alignment Layers for Twisted-Nematic Liquid Crystal Displays Using Ion-Beam Bombardment

Yun Gun Lee, Gi Seok Heo, Hong Gyu Park, Hae Chang Jeong, Ju Hwan Lee, Dae Shik Seo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This letter demonstrates liquid crystal (LC) alignment on solution-derived Zn-doped GaO (ZnGaO) films using an ion beam (IB) method. Homogeneous and uniform LC alignment was achieved on IB-irradiated ZnGaO films. X-ray photoelectron spectroscopy was used to analyze the chemical bonding states of the IB-irradiated ZnGaO surfaces to verify the compositional behavior for LC alignment. In addition, ZnGaO films with twisted nematic cells exhibited electro-optical characteristics comparable with those of a conventional polyimide layer for potential LC display applications.

Original languageEnglish
Article number7122885
Pages (from-to)817-819
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number8
DOIs
Publication statusPublished - 2015 Aug 1

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Liquid Crystals
Nematic liquid crystals
Liquid crystal displays
Liquid crystals
Ion beams
Polyimides
X ray photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lee, Yun Gun ; Heo, Gi Seok ; Park, Hong Gyu ; Jeong, Hae Chang ; Lee, Ju Hwan ; Seo, Dae Shik. / Solution-Derived Zn-Doped GaO Films as Alignment Layers for Twisted-Nematic Liquid Crystal Displays Using Ion-Beam Bombardment. In: IEEE Electron Device Letters. 2015 ; Vol. 36, No. 8. pp. 817-819.
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Solution-Derived Zn-Doped GaO Films as Alignment Layers for Twisted-Nematic Liquid Crystal Displays Using Ion-Beam Bombardment. / Lee, Yun Gun; Heo, Gi Seok; Park, Hong Gyu; Jeong, Hae Chang; Lee, Ju Hwan; Seo, Dae Shik.

In: IEEE Electron Device Letters, Vol. 36, No. 8, 7122885, 01.08.2015, p. 817-819.

Research output: Contribution to journalArticle

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AB - This letter demonstrates liquid crystal (LC) alignment on solution-derived Zn-doped GaO (ZnGaO) films using an ion beam (IB) method. Homogeneous and uniform LC alignment was achieved on IB-irradiated ZnGaO films. X-ray photoelectron spectroscopy was used to analyze the chemical bonding states of the IB-irradiated ZnGaO surfaces to verify the compositional behavior for LC alignment. In addition, ZnGaO films with twisted nematic cells exhibited electro-optical characteristics comparable with those of a conventional polyimide layer for potential LC display applications.

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