Solution process for metal oxide thin film transistors under 350°C post-annealing

Woong Hee Jeong, Jung Hyeon Bae, Kyung Min Kim, Dong Lim Kim, You Seung Rim, Si Joon Kim, Hyun Jae Kim, Myung Kwan Ryu, Kyung Bae Park, Jong Baek Seon, Sang Yoon Lee

Research output: Contribution to conferencePaperpeer-review

Abstract

We have investigated solution process for metal oxide thin film transistors under post-annealing temperature of 350°C. Process engineering which includes materials, precursors, and gate insulators acts important roles under 350°C post-annealing process for large-area deposition.

Original languageEnglish
Pages799-800
Number of pages2
Publication statusPublished - 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 2010 Dec 12010 Dec 3

Other

Other17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period10/12/110/12/3

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction

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