Solution process for metal oxide thin film transistors under 350°C post-annealing

Woong Hee Jeong, Jung Hyeon Bae, Kyung Min Kim, Dong Lim Kim, You Seung Rim, Si Joon Kim, Hyun Jae Kim, Myung Kwan Ryu, Kyung Bae Park, Jong Baek Seon, Sang Yoon Lee

Research output: Contribution to conferencePaper

Abstract

We have investigated solution process for metal oxide thin film transistors under post-annealing temperature of 350°C. Process engineering which includes materials, precursors, and gate insulators acts important roles under 350°C post-annealing process for large-area deposition.

Original languageEnglish
Pages799-800
Number of pages2
Publication statusPublished - 2010 Dec 1
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 2010 Dec 12010 Dec 3

Other

Other17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period10/12/110/12/3

Fingerprint

Thin film transistors
Oxide films
Annealing
Process engineering
Metals
Temperature

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction

Cite this

Jeong, W. H., Bae, J. H., Kim, K. M., Kim, D. L., Rim, Y. S., Kim, S. J., ... Lee, S. Y. (2010). Solution process for metal oxide thin film transistors under 350°C post-annealing. 799-800. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.
Jeong, Woong Hee ; Bae, Jung Hyeon ; Kim, Kyung Min ; Kim, Dong Lim ; Rim, You Seung ; Kim, Si Joon ; Kim, Hyun Jae ; Ryu, Myung Kwan ; Park, Kyung Bae ; Seon, Jong Baek ; Lee, Sang Yoon. / Solution process for metal oxide thin film transistors under 350°C post-annealing. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.2 p.
@conference{97a94a6000a942618d8983ffcd2e3c6c,
title = "Solution process for metal oxide thin film transistors under 350°C post-annealing",
abstract = "We have investigated solution process for metal oxide thin film transistors under post-annealing temperature of 350°C. Process engineering which includes materials, precursors, and gate insulators acts important roles under 350°C post-annealing process for large-area deposition.",
author = "Jeong, {Woong Hee} and Bae, {Jung Hyeon} and Kim, {Kyung Min} and Kim, {Dong Lim} and Rim, {You Seung} and Kim, {Si Joon} and Kim, {Hyun Jae} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Seon, {Jong Baek} and Lee, {Sang Yoon}",
year = "2010",
month = "12",
day = "1",
language = "English",
pages = "799--800",
note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

}

Jeong, WH, Bae, JH, Kim, KM, Kim, DL, Rim, YS, Kim, SJ, Kim, HJ, Ryu, MK, Park, KB, Seon, JB & Lee, SY 2010, 'Solution process for metal oxide thin film transistors under 350°C post-annealing', Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan, 10/12/1 - 10/12/3 pp. 799-800.

Solution process for metal oxide thin film transistors under 350°C post-annealing. / Jeong, Woong Hee; Bae, Jung Hyeon; Kim, Kyung Min; Kim, Dong Lim; Rim, You Seung; Kim, Si Joon; Kim, Hyun Jae; Ryu, Myung Kwan; Park, Kyung Bae; Seon, Jong Baek; Lee, Sang Yoon.

2010. 799-800 Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Solution process for metal oxide thin film transistors under 350°C post-annealing

AU - Jeong, Woong Hee

AU - Bae, Jung Hyeon

AU - Kim, Kyung Min

AU - Kim, Dong Lim

AU - Rim, You Seung

AU - Kim, Si Joon

AU - Kim, Hyun Jae

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Seon, Jong Baek

AU - Lee, Sang Yoon

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We have investigated solution process for metal oxide thin film transistors under post-annealing temperature of 350°C. Process engineering which includes materials, precursors, and gate insulators acts important roles under 350°C post-annealing process for large-area deposition.

AB - We have investigated solution process for metal oxide thin film transistors under post-annealing temperature of 350°C. Process engineering which includes materials, precursors, and gate insulators acts important roles under 350°C post-annealing process for large-area deposition.

UR - http://www.scopus.com/inward/record.url?scp=79956322964&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956322964&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956322964

SP - 799

EP - 800

ER -

Jeong WH, Bae JH, Kim KM, Kim DL, Rim YS, Kim SJ et al. Solution process for metal oxide thin film transistors under 350°C post-annealing. 2010. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.