Solution process for metal oxide thin film transistors under 350°C post-annealing

Woong Hee Jeong, Jung Hyeon Bae, Kyung Min Kim, Dong Lim Kim, You Seung Rim, Si Joon Kim, Hyun Jae Kim, Myung Kwan Ryu, Kyung Bae Park, Jong Baek Seon, Sang Yoon Lee

Research output: Contribution to conferencePaperpeer-review

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Engineering & Materials Science