Abstract
We developed solution-processable tin-doped indium oxide (ITO) with a versatile patternability. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent micro-patterned electrodes defined by conventional photolithography, inkjet printing, and transfer molding. Such a versatile liquid-phase ITO material was successfully applied to demonstrate for the first time fully transparent all-oxide thin film transistors with the solution-processed gate/source/drain electrodes. This proof-of-concept study suggests that our solution-processable transparent conducting oxide can open the possibility of realizing fully transparent devices using all-solution processing.
| Original language | English |
|---|---|
| Pages (from-to) | 14646-14654 |
| Number of pages | 9 |
| Journal | Journal of Materials Chemistry |
| Volume | 21 |
| Issue number | 38 |
| DOIs | |
| Publication status | Published - 2011 Oct 14 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Chemistry
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Cite this
Song, K., Jung, Y., Kim, Y., Kim, A., Hwang, J. K., Sung, M. M., & Moon, J. (2011). Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors. Journal of Materials Chemistry, 21(38), 14646-14654. https://doi.org/10.1039/c1jm11418b