Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors

Keunkyu Song, Yangho Jung, Youngwoo Kim, Areum Kim, Jae Kwon Hwang, Myung Mo Sung, Jooho Moon

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

We developed solution-processable tin-doped indium oxide (ITO) with a versatile patternability. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent micro-patterned electrodes defined by conventional photolithography, inkjet printing, and transfer molding. Such a versatile liquid-phase ITO material was successfully applied to demonstrate for the first time fully transparent all-oxide thin film transistors with the solution-processed gate/source/drain electrodes. This proof-of-concept study suggests that our solution-processable transparent conducting oxide can open the possibility of realizing fully transparent devices using all-solution processing.

Original languageEnglish
Pages (from-to)14646-14654
Number of pages9
JournalJournal of Materials Chemistry
Volume21
Issue number38
DOIs
Publication statusPublished - 2011 Oct 14

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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