Abstract
We developed solution-processable tin-doped indium oxide (ITO) with a versatile patternability. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent micro-patterned electrodes defined by conventional photolithography, inkjet printing, and transfer molding. Such a versatile liquid-phase ITO material was successfully applied to demonstrate for the first time fully transparent all-oxide thin film transistors with the solution-processed gate/source/drain electrodes. This proof-of-concept study suggests that our solution-processable transparent conducting oxide can open the possibility of realizing fully transparent devices using all-solution processing.
| Original language | English |
|---|---|
| Pages (from-to) | 14646-14654 |
| Number of pages | 9 |
| Journal | Journal of Materials Chemistry |
| Volume | 21 |
| Issue number | 38 |
| DOIs | |
| Publication status | Published - 2011 Oct 14 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Chemistry
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Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors. / Song, Keunkyu; Jung, Yangho; Kim, Youngwoo; Kim, Areum; Hwang, Jae Kwon; Sung, Myung Mo; Moon, Joo Ho.
In: Journal of Materials Chemistry, Vol. 21, No. 38, 14.10.2011, p. 14646-14654.Research output: Contribution to journal › Article
TY - JOUR
T1 - Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors
AU - Song, Keunkyu
AU - Jung, Yangho
AU - Kim, Youngwoo
AU - Kim, Areum
AU - Hwang, Jae Kwon
AU - Sung, Myung Mo
AU - Moon, Joo Ho
PY - 2011/10/14
Y1 - 2011/10/14
N2 - We developed solution-processable tin-doped indium oxide (ITO) with a versatile patternability. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent micro-patterned electrodes defined by conventional photolithography, inkjet printing, and transfer molding. Such a versatile liquid-phase ITO material was successfully applied to demonstrate for the first time fully transparent all-oxide thin film transistors with the solution-processed gate/source/drain electrodes. This proof-of-concept study suggests that our solution-processable transparent conducting oxide can open the possibility of realizing fully transparent devices using all-solution processing.
AB - We developed solution-processable tin-doped indium oxide (ITO) with a versatile patternability. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent micro-patterned electrodes defined by conventional photolithography, inkjet printing, and transfer molding. Such a versatile liquid-phase ITO material was successfully applied to demonstrate for the first time fully transparent all-oxide thin film transistors with the solution-processed gate/source/drain electrodes. This proof-of-concept study suggests that our solution-processable transparent conducting oxide can open the possibility of realizing fully transparent devices using all-solution processing.
UR - http://www.scopus.com/inward/record.url?scp=81855165931&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=81855165931&partnerID=8YFLogxK
U2 - 10.1039/c1jm11418b
DO - 10.1039/c1jm11418b
M3 - Article
AN - SCOPUS:81855165931
VL - 21
SP - 14646
EP - 14654
JO - Journal of Materials Chemistry
JF - Journal of Materials Chemistry
SN - 0959-9428
IS - 38
ER -