Al-doped ZnO rods of nanometer to sub-micrometer size range have been successfully synthesized by a simple yet cost-effective solution processed sonochemical technique. Systematic XRD analysis established the solid solubility limit for Al in the ZnO lattice to be ca. 3 mol% at an elevated annealing temperature of 800 °C. The secondary ZnAl2O4 phase appears with increasing dopant concentrations and at lower annealing temperatures. Significant variations in the optoelectronic properties are induced by modifications in the surface defects of ZnO rods as a result of Al doping. As a consequence, an improved fill factor (FF) of 74.78 and 75.76% with a conversion efficiency (η) of 1.59 and 1.79% have been achieved for the fabricated DSSC devices made of the 800 °C annealed ZnO rods doped by 1 and 3 mol% Al, respectively.
|Number of pages||8|
|Journal||Current Applied Physics|
|Publication status||Published - 2021 Oct|
Bibliographical noteFunding Information:
This work was supported by the Leader Researcher program (NRF-2018R1A3B1052042) of the Korean Ministry of Science and ICT (MSIT). We also thank the support by NRF-2019K1A3A7A09033395 grant of the MSIT.
This work was supported by the Leader Researcher program (NRF- 2018R1A3B1052042 ) of the Korean Ministry of Science and ICT (MSIT) . We also thank the support by NRF- 2019K1A3A7A09033395 grant of the MSIT .
© 2021 Korean Physical Society
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)