Solution processed Al-doped ZnO and its performance in dye sensitized solar cells

Partha Pratim Das; Anurag Roy; Parukuttyamma Sujatha Devi; Yongjae Lee

doi:10.1016/j.cap.2021.05.009

Solution processed Al-doped ZnO and its performance in dye sensitized solar cells

Partha Pratim Das, Anurag Roy, Parukuttyamma Sujatha Devi, Yongjae Lee

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Al-doped ZnO rods of nanometer to sub-micrometer size range have been successfully synthesized by a simple yet cost-effective solution processed sonochemical technique. Systematic XRD analysis established the solid solubility limit for Al in the ZnO lattice to be ca. 3 mol% at an elevated annealing temperature of 800 °C. The secondary ZnAl₂O₄ phase appears with increasing dopant concentrations and at lower annealing temperatures. Significant variations in the optoelectronic properties are induced by modifications in the surface defects of ZnO rods as a result of Al doping. As a consequence, an improved fill factor (FF) of 74.78 and 75.76% with a conversion efficiency (η) of 1.59 and 1.79% have been achieved for the fabricated DSSC devices made of the 800 °C annealed ZnO rods doped by 1 and 3 mol% Al, respectively.

Original language	English
Pages (from-to)	69-76
Number of pages	8
Journal	Current Applied Physics
Volume	30
DOIs	https://doi.org/10.1016/j.cap.2021.05.009
Publication status	Published - 2021 Oct

Bibliographical note

Funding Information:
This work was supported by the Leader Researcher program (NRF-2018R1A3B1052042) of the Korean Ministry of Science and ICT (MSIT). We also thank the support by NRF-2019K1A3A7A09033395 grant of the MSIT.

Funding Information:
This work was supported by the Leader Researcher program (NRF- 2018R1A3B1052042 ) of the Korean Ministry of Science and ICT (MSIT) . We also thank the support by NRF- 2019K1A3A7A09033395 grant of the MSIT .

Publisher Copyright:
© 2021 Korean Physical Society

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2021.05.009

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title = "Solution processed Al-doped ZnO and its performance in dye sensitized solar cells",

abstract = "Al-doped ZnO rods of nanometer to sub-micrometer size range have been successfully synthesized by a simple yet cost-effective solution processed sonochemical technique. Systematic XRD analysis established the solid solubility limit for Al in the ZnO lattice to be ca. 3 mol% at an elevated annealing temperature of 800 °C. The secondary ZnAl2O4 phase appears with increasing dopant concentrations and at lower annealing temperatures. Significant variations in the optoelectronic properties are induced by modifications in the surface defects of ZnO rods as a result of Al doping. As a consequence, an improved fill factor (FF) of 74.78 and 75.76% with a conversion efficiency (η) of 1.59 and 1.79% have been achieved for the fabricated DSSC devices made of the 800 °C annealed ZnO rods doped by 1 and 3 mol% Al, respectively.",

author = "Das, {Partha Pratim} and Anurag Roy and Devi, {Parukuttyamma Sujatha} and Yongjae Lee",

note = "Funding Information: This work was supported by the Leader Researcher program (NRF-2018R1A3B1052042) of the Korean Ministry of Science and ICT (MSIT). We also thank the support by NRF-2019K1A3A7A09033395 grant of the MSIT. Funding Information: This work was supported by the Leader Researcher program (NRF- 2018R1A3B1052042 ) of the Korean Ministry of Science and ICT (MSIT) . We also thank the support by NRF- 2019K1A3A7A09033395 grant of the MSIT . Publisher Copyright: {\textcopyright} 2021 Korean Physical Society",

year = "2021",

month = oct,

doi = "10.1016/j.cap.2021.05.009",

language = "English",

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pages = "69--76",

journal = "Current Applied Physics",

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AU - Das, Partha Pratim

AU - Roy, Anurag

AU - Devi, Parukuttyamma Sujatha

AU - Lee, Yongjae

N1 - Funding Information: This work was supported by the Leader Researcher program (NRF-2018R1A3B1052042) of the Korean Ministry of Science and ICT (MSIT). We also thank the support by NRF-2019K1A3A7A09033395 grant of the MSIT. Funding Information: This work was supported by the Leader Researcher program (NRF- 2018R1A3B1052042 ) of the Korean Ministry of Science and ICT (MSIT) . We also thank the support by NRF- 2019K1A3A7A09033395 grant of the MSIT . Publisher Copyright: © 2021 Korean Physical Society

PY - 2021/10

Y1 - 2021/10

N2 - Al-doped ZnO rods of nanometer to sub-micrometer size range have been successfully synthesized by a simple yet cost-effective solution processed sonochemical technique. Systematic XRD analysis established the solid solubility limit for Al in the ZnO lattice to be ca. 3 mol% at an elevated annealing temperature of 800 °C. The secondary ZnAl2O4 phase appears with increasing dopant concentrations and at lower annealing temperatures. Significant variations in the optoelectronic properties are induced by modifications in the surface defects of ZnO rods as a result of Al doping. As a consequence, an improved fill factor (FF) of 74.78 and 75.76% with a conversion efficiency (η) of 1.59 and 1.79% have been achieved for the fabricated DSSC devices made of the 800 °C annealed ZnO rods doped by 1 and 3 mol% Al, respectively.

AB - Al-doped ZnO rods of nanometer to sub-micrometer size range have been successfully synthesized by a simple yet cost-effective solution processed sonochemical technique. Systematic XRD analysis established the solid solubility limit for Al in the ZnO lattice to be ca. 3 mol% at an elevated annealing temperature of 800 °C. The secondary ZnAl2O4 phase appears with increasing dopant concentrations and at lower annealing temperatures. Significant variations in the optoelectronic properties are induced by modifications in the surface defects of ZnO rods as a result of Al doping. As a consequence, an improved fill factor (FF) of 74.78 and 75.76% with a conversion efficiency (η) of 1.59 and 1.79% have been achieved for the fabricated DSSC devices made of the 800 °C annealed ZnO rods doped by 1 and 3 mol% Al, respectively.

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Solution processed Al-doped ZnO and its performance in dye sensitized solar cells

Abstract

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