Solution-processed indium Zinc oxide thin film transistors for amoled operation

Jong Baek Seon, Myung Kwan Ryu, Kyung Bae Park, Seo Kee, Young Gu Lee, Bon Won Koo, Sang Yoon Lee, Gun Hee Kim, Woong Hee Jeong, Hyun Jae Kim

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

In this report, we introduce high-performance indium zinc oxide (IZO) thin films for use in thin-film transistors (TFTs) and eventually for active matrix organic light-emitting diode (AMOLED) display operation. Spin-coated and annealed IZO thin films via sol-gel processing showed carbon-free and robust film properties. TFTs using these films exhibited n-channel characteristics with a field-effect mobility of 6.57 cm2V-1s-1, which is enough for AMOLED driving, a threshold voltage of -0.3 V, a turn-on voltage of -1.5 V, a on/off ratio of 109, and a subthreshold swing of 0.15 V/decade. These results open up new possibilities in demonstrating AMOLED panels driven by sol-gel processed IZO TFT backplanes.

Original languageEnglish
Pages1693-1695
Number of pages3
Publication statusPublished - 2009 Dec 1
Event16th International Display Workshops, IDW '09 - Miyazaki, Japan
Duration: 2009 Dec 92009 Dec 11

Other

Other16th International Display Workshops, IDW '09
CountryJapan
CityMiyazaki
Period09/12/909/12/11

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Seon, J. B., Ryu, M. K., Park, K. B., Kee, S., Lee, Y. G., Koo, B. W., Lee, S. Y., Kim, G. H., Jeong, W. H., & Kim, H. J. (2009). Solution-processed indium Zinc oxide thin film transistors for amoled operation. 1693-1695. Paper presented at 16th International Display Workshops, IDW '09, Miyazaki, Japan.