Abstract
In this report, we introduce high-performance indium zinc oxide (IZO) thin films for use in thin-film transistors (TFTs) and eventually for active matrix organic light-emitting diode (AMOLED) display operation. Spin-coated and annealed IZO thin films via sol-gel processing showed carbon-free and robust film properties. TFTs using these films exhibited n-channel characteristics with a field-effect mobility of 6.57 cm2V-1s-1, which is enough for AMOLED driving, a threshold voltage of -0.3 V, a turn-on voltage of -1.5 V, a on/off ratio of 109, and a subthreshold swing of 0.15 V/decade. These results open up new possibilities in demonstrating AMOLED panels driven by sol-gel processed IZO TFT backplanes.
| Original language | English |
|---|---|
| Pages | 1693-1695 |
| Number of pages | 3 |
| Publication status | Published - 2009 Dec 1 |
| Event | 16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11 |
Other
| Other | 16th International Display Workshops, IDW '09 |
|---|---|
| Country | Japan |
| City | Miyazaki |
| Period | 09/12/9 → 09/12/11 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
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Solution-processed indium Zinc oxide thin film transistors for amoled operation. / Seon, Jong Baek; Ryu, Myung Kwan; Park, Kyung Bae; Kee, Seo; Lee, Young Gu; Koo, Bon Won; Lee, Sang Yoon; Kim, Gun Hee; Jeong, Woong Hee; Kim, Hyun Jae.
2009. 1693-1695 Paper presented at 16th International Display Workshops, IDW '09, Miyazaki, Japan.Research output: Contribution to conference › Paper
TY - CONF
T1 - Solution-processed indium Zinc oxide thin film transistors for amoled operation
AU - Seon, Jong Baek
AU - Ryu, Myung Kwan
AU - Park, Kyung Bae
AU - Kee, Seo
AU - Lee, Young Gu
AU - Koo, Bon Won
AU - Lee, Sang Yoon
AU - Kim, Gun Hee
AU - Jeong, Woong Hee
AU - Kim, Hyun Jae
PY - 2009/12/1
Y1 - 2009/12/1
N2 - In this report, we introduce high-performance indium zinc oxide (IZO) thin films for use in thin-film transistors (TFTs) and eventually for active matrix organic light-emitting diode (AMOLED) display operation. Spin-coated and annealed IZO thin films via sol-gel processing showed carbon-free and robust film properties. TFTs using these films exhibited n-channel characteristics with a field-effect mobility of 6.57 cm2V-1s-1, which is enough for AMOLED driving, a threshold voltage of -0.3 V, a turn-on voltage of -1.5 V, a on/off ratio of 109, and a subthreshold swing of 0.15 V/decade. These results open up new possibilities in demonstrating AMOLED panels driven by sol-gel processed IZO TFT backplanes.
AB - In this report, we introduce high-performance indium zinc oxide (IZO) thin films for use in thin-film transistors (TFTs) and eventually for active matrix organic light-emitting diode (AMOLED) display operation. Spin-coated and annealed IZO thin films via sol-gel processing showed carbon-free and robust film properties. TFTs using these films exhibited n-channel characteristics with a field-effect mobility of 6.57 cm2V-1s-1, which is enough for AMOLED driving, a threshold voltage of -0.3 V, a turn-on voltage of -1.5 V, a on/off ratio of 109, and a subthreshold swing of 0.15 V/decade. These results open up new possibilities in demonstrating AMOLED panels driven by sol-gel processed IZO TFT backplanes.
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M3 - Paper
AN - SCOPUS:77954157905
SP - 1693
EP - 1695
ER -