Abstract
In this report, we introduce high-performance indium zinc oxide (IZO) thin films for use in thin-film transistors (TFTs) and eventually for active matrix organic light-emitting diode (AMOLED) display operation. Spin-coated and annealed IZO thin films via sol-gel processing showed carbon-free and robust film properties. TFTs using these films exhibited n-channel characteristics with a field-effect mobility of 6.57 cm2V-1s-1, which is enough for AMOLED driving, a threshold voltage of -0.3 V, a turn-on voltage of -1.5 V, a on/off ratio of 109, and a subthreshold swing of 0.15 V/decade. These results open up new possibilities in demonstrating AMOLED panels driven by sol-gel processed IZO TFT backplanes.
| Original language | English |
|---|---|
| Pages | 1693-1695 |
| Number of pages | 3 |
| Publication status | Published - 2009 Dec 1 |
| Event | 16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11 |
Other
| Other | 16th International Display Workshops, IDW '09 |
|---|---|
| Country | Japan |
| City | Miyazaki |
| Period | 09/12/9 → 09/12/11 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Seon, J. B., Ryu, M. K., Park, K. B., Kee, S., Lee, Y. G., Koo, B. W., Lee, S. Y., Kim, G. H., Jeong, W. H., & Kim, H. J. (2009). Solution-processed indium Zinc oxide thin film transistors for amoled operation. 1693-1695. Paper presented at 16th International Display Workshops, IDW '09, Miyazaki, Japan.