Solution-processed indium Zinc oxide thin film transistors for amoled operation

Jong Baek Seon; Myung Kwan Ryu; Kyung Bae Park; Seo Kee; Young Gu Lee; Bon Won Koo; Sang Yoon Lee; Gun Hee Kim; Woong Hee Jeong; Hyun Jae Kim

Solution-processed indium Zinc oxide thin film transistors for amoled operation

Jong Baek Seon, Myung Kwan Ryu, Kyung Bae Park, Seo Kee, Young Gu Lee, Bon Won Koo, Sang Yoon Lee, Gun Hee Kim, Woong Hee Jeong, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

In this report, we introduce high-performance indium zinc oxide (IZO) thin films for use in thin-film transistors (TFTs) and eventually for active matrix organic light-emitting diode (AMOLED) display operation. Spin-coated and annealed IZO thin films via sol-gel processing showed carbon-free and robust film properties. TFTs using these films exhibited n-channel characteristics with a field-effect mobility of 6.57 cm²V^-1s^-1, which is enough for AMOLED driving, a threshold voltage of -0.3 V, a turn-on voltage of -1.5 V, a on/off ratio of 10⁹, and a subthreshold swing of 0.15 V/decade. These results open up new possibilities in demonstrating AMOLED panels driven by sol-gel processed IZO TFT backplanes.

Original language	English
Pages	1693-1695
Number of pages	3
Publication status	Published - 2009
Event	16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11

Other

Other	16th International Display Workshops, IDW '09
Country/Territory	Japan
City	Miyazaki
Period	09/12/9 → 09/12/11

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

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title = "Solution-processed indium Zinc oxide thin film transistors for amoled operation",

abstract = "In this report, we introduce high-performance indium zinc oxide (IZO) thin films for use in thin-film transistors (TFTs) and eventually for active matrix organic light-emitting diode (AMOLED) display operation. Spin-coated and annealed IZO thin films via sol-gel processing showed carbon-free and robust film properties. TFTs using these films exhibited n-channel characteristics with a field-effect mobility of 6.57 cm2V-1s-1, which is enough for AMOLED driving, a threshold voltage of -0.3 V, a turn-on voltage of -1.5 V, a on/off ratio of 109, and a subthreshold swing of 0.15 V/decade. These results open up new possibilities in demonstrating AMOLED panels driven by sol-gel processed IZO TFT backplanes.",

author = "Seon, {Jong Baek} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Seo Kee and Lee, {Young Gu} and Koo, {Bon Won} and Lee, {Sang Yoon} and Kim, {Gun Hee} and Jeong, {Woong Hee} and Kim, {Hyun Jae}",

year = "2009",

language = "English",

pages = "1693--1695",

note = "16th International Display Workshops, IDW '09 ; Conference date: 09-12-2009 Through 11-12-2009",

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TY - CONF

T1 - Solution-processed indium Zinc oxide thin film transistors for amoled operation

AU - Seon, Jong Baek

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Kee, Seo

AU - Lee, Young Gu

AU - Koo, Bon Won

AU - Lee, Sang Yoon

AU - Kim, Gun Hee

AU - Jeong, Woong Hee

AU - Kim, Hyun Jae

PY - 2009

Y1 - 2009

N2 - In this report, we introduce high-performance indium zinc oxide (IZO) thin films for use in thin-film transistors (TFTs) and eventually for active matrix organic light-emitting diode (AMOLED) display operation. Spin-coated and annealed IZO thin films via sol-gel processing showed carbon-free and robust film properties. TFTs using these films exhibited n-channel characteristics with a field-effect mobility of 6.57 cm2V-1s-1, which is enough for AMOLED driving, a threshold voltage of -0.3 V, a turn-on voltage of -1.5 V, a on/off ratio of 109, and a subthreshold swing of 0.15 V/decade. These results open up new possibilities in demonstrating AMOLED panels driven by sol-gel processed IZO TFT backplanes.

AB - In this report, we introduce high-performance indium zinc oxide (IZO) thin films for use in thin-film transistors (TFTs) and eventually for active matrix organic light-emitting diode (AMOLED) display operation. Spin-coated and annealed IZO thin films via sol-gel processing showed carbon-free and robust film properties. TFTs using these films exhibited n-channel characteristics with a field-effect mobility of 6.57 cm2V-1s-1, which is enough for AMOLED driving, a threshold voltage of -0.3 V, a turn-on voltage of -1.5 V, a on/off ratio of 109, and a subthreshold swing of 0.15 V/decade. These results open up new possibilities in demonstrating AMOLED panels driven by sol-gel processed IZO TFT backplanes.

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T2 - 16th International Display Workshops, IDW '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Solution-processed indium Zinc oxide thin film transistors for amoled operation

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