Abstract
In this report, we introduce high-performance indium zinc oxide (IZO) thin films for use in thin-film transistors (TFTs) and eventually for active matrix organic light-emitting diode (AMOLED) display operation. Spin-coated and annealed IZO thin films via sol-gel processing showed carbon-free and robust film properties. TFTs using these films exhibited n-channel characteristics with a field-effect mobility of 6.57 cm2V-1s-1, which is enough for AMOLED driving, a threshold voltage of -0.3 V, a turn-on voltage of -1.5 V, a on/off ratio of 109, and a subthreshold swing of 0.15 V/decade. These results open up new possibilities in demonstrating AMOLED panels driven by sol-gel processed IZO TFT backplanes.
Original language | English |
---|---|
Pages | 1693-1695 |
Number of pages | 3 |
Publication status | Published - 2009 |
Event | 16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11 |
Other
Other | 16th International Display Workshops, IDW '09 |
---|---|
Country | Japan |
City | Miyazaki |
Period | 09/12/9 → 09/12/11 |
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials