We report on a fully transparent solution processed thin-film transistor (TFT) device with oxide semiconductor and oxide electrode. Selective doping into the sol-gel derived ZnO materials tailors the electrical properties to range from metallic to semiconducting characteristics. Integration of a spin-coated zinc tin oxide (ZTO) semiconductor with an ink-jet-printed zinc indium oxide (ZIO) electrode creates a transparent TFT with high performance and good transparency (∼90%). Use of the same ZnO-based oxide materials in a TFT allows for the formation of good electrical contacts characterized by low contact resistance, comparable to those with a vacuum-deposited Al electrode. Our results suggest that the solution-processed ZnO-based TFT has great potential to work as a building block for future printed transparent electronics.
|Number of pages||6|
|Journal||Journal of Materials Chemistry|
|Publication status||Published - 2009|
All Science Journal Classification (ASJC) codes
- Materials Chemistry