Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors

Sun Woong Han, Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Kwang Hyun Kim, Hong Koo Baik

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Abstract: We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (Jleak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower Jleak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics. Graphical Abstract: [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)570-575
Number of pages6
JournalJournal of Sol-Gel Science and Technology
Volume81
Issue number2
DOIs
Publication statusPublished - 2017 Feb 1

Fingerprint

Zinc Oxide
Indium
Thin film transistors
Zinc oxide
zinc oxides
indium oxides
low voltage
Oxide films
transistors
Electric potential
thin films
Electric breakdown
electrical faults
Leakage currents
Structural properties
Electric properties
Energy gap
leakage
Current density
Optical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Han, Sun Woong ; Park, Jee Ho ; Yoo, Young Bum ; Lee, Keun Ho ; Kim, Kwang Hyun ; Baik, Hong Koo. / Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors. In: Journal of Sol-Gel Science and Technology. 2017 ; Vol. 81, No. 2. pp. 570-575.
@article{f0cead4ad9594b5b8b0ffbdae5a72e00,
title = "Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors",
abstract = "Abstract: We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (Jleak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower Jleak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics. Graphical Abstract: [Figure not available: see fulltext.]",
author = "Han, {Sun Woong} and Park, {Jee Ho} and Yoo, {Young Bum} and Lee, {Keun Ho} and Kim, {Kwang Hyun} and Baik, {Hong Koo}",
year = "2017",
month = "2",
day = "1",
doi = "10.1007/s10971-016-4205-y",
language = "English",
volume = "81",
pages = "570--575",
journal = "Journal of Sol-Gel Science and Technology",
issn = "0928-0707",
publisher = "Springer Netherlands",
number = "2",

}

Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors. / Han, Sun Woong; Park, Jee Ho; Yoo, Young Bum; Lee, Keun Ho; Kim, Kwang Hyun; Baik, Hong Koo.

In: Journal of Sol-Gel Science and Technology, Vol. 81, No. 2, 01.02.2017, p. 570-575.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors

AU - Han, Sun Woong

AU - Park, Jee Ho

AU - Yoo, Young Bum

AU - Lee, Keun Ho

AU - Kim, Kwang Hyun

AU - Baik, Hong Koo

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Abstract: We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (Jleak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower Jleak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics. Graphical Abstract: [Figure not available: see fulltext.]

AB - Abstract: We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (Jleak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower Jleak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics. Graphical Abstract: [Figure not available: see fulltext.]

UR - http://www.scopus.com/inward/record.url?scp=84988660600&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84988660600&partnerID=8YFLogxK

U2 - 10.1007/s10971-016-4205-y

DO - 10.1007/s10971-016-4205-y

M3 - Article

AN - SCOPUS:84988660600

VL - 81

SP - 570

EP - 575

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

SN - 0928-0707

IS - 2

ER -