Abstract: We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (Jleak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower Jleak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics. Graphical Abstract: [Figure not available: see fulltext.]
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© 2016, Springer Science+Business Media New York.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry