Solution-processed oxide thin-film transistors using aluminum and nitrate precursors for low-temperature annealing

Woong Hee Jeong, Jung Hyeon Bae, Kyung Min Kim, Dong Lim Kim, You Seung Rim, Si Joon Kim, Kyung Bae Park, Jong Baek Seon, Myung Kwan Ryu, Hyun Jae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this article, a solution process for oxide thin-film transistors (TFTs) at low-temperature annealing was investigated. Solution-process engineering, including materials and precursors, plays an important role in oxide thin-film deposition on large glass and flexible substrates at low temperature. Reactive material could reduce the alloy reaction temperature for a multicomponent oxide system. A volatile precursor could also reduce annealing temperature in the formation of metal-oxide thin films. A solution process with reactive Al and a volatile nitrate precursor can demonstrates competitive oxide TFTs at 350°C.

Original languageEnglish
Pages (from-to)620-622
Number of pages3
JournalJournal of the Society for Information Display
Volume19
Issue number9
DOIs
Publication statusPublished - 2011 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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