Solution-processed oxide thin-film transistors using aluminum and nitrate precursors for low-temperature annealing

Woong Hee Jeong, Jung Hyeon Bae, Kyung Min Kim, Dong Lim Kim, You Seung Rim, Si Joon Kim, Kyung Bae Park, Jong Baek Seon, Myung Kwan Ryu, Hyun Jae Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this article, a solution process for oxide thin-film transistors (TFTs) at low-temperature annealing was investigated. Solution-process engineering, including materials and precursors, plays an important role in oxide thin-film deposition on large glass and flexible substrates at low temperature. Reactive material could reduce the alloy reaction temperature for a multicomponent oxide system. A volatile precursor could also reduce annealing temperature in the formation of metal-oxide thin films. A solution process with reactive Al and a volatile nitrate precursor can demonstrates competitive oxide TFTs at 350°C.

Original languageEnglish
Pages (from-to)620-622
Number of pages3
JournalJournal of the Society for Information Display
Volume19
Issue number9
DOIs
Publication statusPublished - 2011 Sep 1

Fingerprint

Thin film transistors
Oxide films
nitrates
Nitrates
transistors
Annealing
aluminum
Aluminum
annealing
oxides
thin films
Thin films
Temperature
Process engineering
Oxides
metal oxides
Metals
engineering
Glass
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Jeong, Woong Hee ; Bae, Jung Hyeon ; Kim, Kyung Min ; Kim, Dong Lim ; Rim, You Seung ; Kim, Si Joon ; Park, Kyung Bae ; Seon, Jong Baek ; Ryu, Myung Kwan ; Kim, Hyun Jae. / Solution-processed oxide thin-film transistors using aluminum and nitrate precursors for low-temperature annealing. In: Journal of the Society for Information Display. 2011 ; Vol. 19, No. 9. pp. 620-622.
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Solution-processed oxide thin-film transistors using aluminum and nitrate precursors for low-temperature annealing. / Jeong, Woong Hee; Bae, Jung Hyeon; Kim, Kyung Min; Kim, Dong Lim; Rim, You Seung; Kim, Si Joon; Park, Kyung Bae; Seon, Jong Baek; Ryu, Myung Kwan; Kim, Hyun Jae.

In: Journal of the Society for Information Display, Vol. 19, No. 9, 01.09.2011, p. 620-622.

Research output: Contribution to journalArticle

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