Solution-processed thin film transistors with hafnium indium zinc oxide for AMOLED backplane

Woong Hee Jeong, Gun Hee Kim, Hyun Soo Shin, Hyun Jae Kim

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

In this study, the effects of hafnium in InZnO system were investigated. We also have fabricated hafnium-indium-zinc-oxide (HIZO) thin film transistors (TFTs) by solution process. The HIZO TFTs showed a field effect mobility of 2 cm2/Vs, an on/off current ratio of 4.95x106 and a sub-threshold swing of 0.54 V/decade. These results could enable the fabrication of high performance HIZO TFTs for AMOLED backplanes with solution process.

Original languageEnglish
Pages1795-1798
Number of pages4
Publication statusPublished - 2009 Dec 1
Event16th International Display Workshops, IDW '09 - Miyazaki, Japan
Duration: 2009 Dec 92009 Dec 11

Other

Other16th International Display Workshops, IDW '09
CountryJapan
CityMiyazaki
Period09/12/909/12/11

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Jeong, W. H., Kim, G. H., Shin, H. S., & Kim, H. J. (2009). Solution-processed thin film transistors with hafnium indium zinc oxide for AMOLED backplane. 1795-1798. Paper presented at 16th International Display Workshops, IDW '09, Miyazaki, Japan.