Solution-processed zinc tin oxide semiconductor for thin-film transistors

Sunho Jeong, Youngmin Jeong, Jooho Moon

Research output: Contribution to journalArticle

144 Citations (Scopus)

Abstract

A zinc tin oxide (ZTO) semiconductor layer for thin-film transistor was fabricated using solution-processable sol-gel material. To obtain semiconductor characteristics, ZTO gels should be annealed such that salts and organic components in the ZTO layer undergo complete decomposition. The thermal behavior of ZTO precursor materials was investigated, and the electrical performances of solution-processed transistors were analyzed as a function of the annealing temperature of the ZTO semiconductor layer. We also studied the electrical performance of transistors as a function of the Sn content of the ZTO layer, in order to understand its influence on the device characteristics of solution-processed transistors.

Original languageEnglish
Pages (from-to)11082-11085
Number of pages4
JournalJournal of Physical Chemistry C
Volume112
Issue number30
DOIs
Publication statusPublished - 2008 Jul 31

Fingerprint

Thin film transistors
Zinc oxide
Tin oxides
zinc oxides
tin oxides
transistors
thin films
Transistors
gels
Sol-gels
Oxide semiconductors
stannic oxide
Gels
Salts
Annealing
Semiconductor materials
salts
Decomposition
decomposition
annealing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Jeong, Sunho ; Jeong, Youngmin ; Moon, Jooho. / Solution-processed zinc tin oxide semiconductor for thin-film transistors. In: Journal of Physical Chemistry C. 2008 ; Vol. 112, No. 30. pp. 11082-11085.
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Solution-processed zinc tin oxide semiconductor for thin-film transistors. / Jeong, Sunho; Jeong, Youngmin; Moon, Jooho.

In: Journal of Physical Chemistry C, Vol. 112, No. 30, 31.07.2008, p. 11082-11085.

Research output: Contribution to journalArticle

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