Solution-processed ZnO nanoparticle-based semiconductor oxide thin-film transistors

Sul Lee, Youngmin Jeong, Sunho Jeong, Jisu Lee, Minhyon Jeon, Jooho Moon

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

We have prepared solution-processed oxide semiconductor thin-film transistors using ZnO nanoparticles with various particle shapes. Uniform, dense, thin films were produced by spin-coating ZnO nanoparticle dispersions containing either nanorods or nanospheres. The influence of annealing atmosphere on both nanoparticle-based TFT devices was investigated. XPS analysis revealed that the ZnO particles of the nanorod and nanosphere dispersions have distinct stoichiometries (i.e., molar ratios of Zn:O). The starting particles in turn predetermine the carrier concentration within the annealed ZnO films, which in turn determines whether the device is a semiconductor or metallic conductor, depending upon the annealing atmosphere. Grain structures of the channel layer also play an important role in determining the device performance of the nanoparticle derived ZnO TFTs.

Original languageEnglish
Pages (from-to)761-769
Number of pages9
JournalSuperlattices and Microstructures
Volume44
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1

Fingerprint

Thin film transistors
Oxide films
transistors
Semiconductor materials
Nanoparticles
nanoparticles
oxides
Nanospheres
thin films
Nanorods
Dispersions
nanorods
Annealing
atmospheres
annealing
Crystal microstructure
Spin coating
Stoichiometry
Carrier concentration
coating

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lee, Sul ; Jeong, Youngmin ; Jeong, Sunho ; Lee, Jisu ; Jeon, Minhyon ; Moon, Jooho. / Solution-processed ZnO nanoparticle-based semiconductor oxide thin-film transistors. In: Superlattices and Microstructures. 2008 ; Vol. 44, No. 6. pp. 761-769.
@article{e061427379de480dad1a11f3299ebbf9,
title = "Solution-processed ZnO nanoparticle-based semiconductor oxide thin-film transistors",
abstract = "We have prepared solution-processed oxide semiconductor thin-film transistors using ZnO nanoparticles with various particle shapes. Uniform, dense, thin films were produced by spin-coating ZnO nanoparticle dispersions containing either nanorods or nanospheres. The influence of annealing atmosphere on both nanoparticle-based TFT devices was investigated. XPS analysis revealed that the ZnO particles of the nanorod and nanosphere dispersions have distinct stoichiometries (i.e., molar ratios of Zn:O). The starting particles in turn predetermine the carrier concentration within the annealed ZnO films, which in turn determines whether the device is a semiconductor or metallic conductor, depending upon the annealing atmosphere. Grain structures of the channel layer also play an important role in determining the device performance of the nanoparticle derived ZnO TFTs.",
author = "Sul Lee and Youngmin Jeong and Sunho Jeong and Jisu Lee and Minhyon Jeon and Jooho Moon",
year = "2008",
month = "12",
day = "1",
doi = "10.1016/j.spmi.2008.09.002",
language = "English",
volume = "44",
pages = "761--769",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "6",

}

Solution-processed ZnO nanoparticle-based semiconductor oxide thin-film transistors. / Lee, Sul; Jeong, Youngmin; Jeong, Sunho; Lee, Jisu; Jeon, Minhyon; Moon, Jooho.

In: Superlattices and Microstructures, Vol. 44, No. 6, 01.12.2008, p. 761-769.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Solution-processed ZnO nanoparticle-based semiconductor oxide thin-film transistors

AU - Lee, Sul

AU - Jeong, Youngmin

AU - Jeong, Sunho

AU - Lee, Jisu

AU - Jeon, Minhyon

AU - Moon, Jooho

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We have prepared solution-processed oxide semiconductor thin-film transistors using ZnO nanoparticles with various particle shapes. Uniform, dense, thin films were produced by spin-coating ZnO nanoparticle dispersions containing either nanorods or nanospheres. The influence of annealing atmosphere on both nanoparticle-based TFT devices was investigated. XPS analysis revealed that the ZnO particles of the nanorod and nanosphere dispersions have distinct stoichiometries (i.e., molar ratios of Zn:O). The starting particles in turn predetermine the carrier concentration within the annealed ZnO films, which in turn determines whether the device is a semiconductor or metallic conductor, depending upon the annealing atmosphere. Grain structures of the channel layer also play an important role in determining the device performance of the nanoparticle derived ZnO TFTs.

AB - We have prepared solution-processed oxide semiconductor thin-film transistors using ZnO nanoparticles with various particle shapes. Uniform, dense, thin films were produced by spin-coating ZnO nanoparticle dispersions containing either nanorods or nanospheres. The influence of annealing atmosphere on both nanoparticle-based TFT devices was investigated. XPS analysis revealed that the ZnO particles of the nanorod and nanosphere dispersions have distinct stoichiometries (i.e., molar ratios of Zn:O). The starting particles in turn predetermine the carrier concentration within the annealed ZnO films, which in turn determines whether the device is a semiconductor or metallic conductor, depending upon the annealing atmosphere. Grain structures of the channel layer also play an important role in determining the device performance of the nanoparticle derived ZnO TFTs.

UR - http://www.scopus.com/inward/record.url?scp=55849103534&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55849103534&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2008.09.002

DO - 10.1016/j.spmi.2008.09.002

M3 - Article

AN - SCOPUS:55849103534

VL - 44

SP - 761

EP - 769

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 6

ER -