Solvent-vapor-annealed A-D-A-type semicrystalline conjugated small molecules for flexible ambipolar field-effect transistors

Min Je Kim, Young Woong Lee, Yujeong Lee, Han Young Woo, Jeong Ho Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper reports a series of acceptor-donor-acceptor (A-D-A)-type small molecules (named P3T4-VCN, P3T4-RCN, and P3T4-INCN) based on an oligothiophene-phenylene core with three different electron-accepting terminal groups - dicyanovinyl (VCN), cyano-rhodanine (RCN), and cyano-indanone (INCN), respectively - for application to flexible ambipolar organic field-effect transistors (OFETs). Intrachain noncovalent coulombic interactions (via S-F and H-F interactions) were incorporated into the design of the P3T4 backbone to enhance the chain planarity. All the P3T4-based OFETs exhibited ambipolar behavior with hole-dominant transport, and the OFET performances were strongly dependent on the terminal groups. The P3T4-INCN OFET exhibited the highest carrier mobility owing to the extended π-conjugation via the INCN moiety, which enhanced the intermolecular cofacial π-π stacking and generated an efficient carrier pathway in the transistor channel. Room temperature solvent vapor annealing resulted in a dramatic increase in the carrier mobility of the OFETs without causing any damage to a polyethylene naphthalate (PEN) plastic substrate. The effects of both the terminal groups of the P3T4 small molecules and solvent vapor annealing were systematically investigated by UV-vis absorption spectroscopy, two-dimensional grazing incidence X-ray diffraction, and atomic force microscopy. In addition, a flexible OFET array with solvent-vapor-annealed P3T4-INCN was successfully fabricated on a PEN substrate. These OFET devices exhibited a hole mobility of 0.15 cm 2 V -1 s -1 , an electron mobility of 0.05 cm 2 V -1 s -1 , an on-off current ratio of ∼10 5 , and excellent mechanical stability even after 300 bending cycles.

Original languageEnglish
Pages (from-to)5698-5706
Number of pages9
JournalJournal of Materials Chemistry C
Volume6
Issue number21
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

Organic field effect transistors
Field effect transistors
Vapors
Molecules
Carrier mobility
Polyethylene
Polyethylenes
Rhodanine
Annealing
Hole mobility
Mechanical stability
Electron mobility
Substrates
Ultraviolet spectroscopy
Absorption spectroscopy
Atomic force microscopy
Transistors
Plastics
X ray diffraction
Electrons

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

@article{302b4f92ce27496c900f8998ede3eb1e,
title = "Solvent-vapor-annealed A-D-A-type semicrystalline conjugated small molecules for flexible ambipolar field-effect transistors",
abstract = "This paper reports a series of acceptor-donor-acceptor (A-D-A)-type small molecules (named P3T4-VCN, P3T4-RCN, and P3T4-INCN) based on an oligothiophene-phenylene core with three different electron-accepting terminal groups - dicyanovinyl (VCN), cyano-rhodanine (RCN), and cyano-indanone (INCN), respectively - for application to flexible ambipolar organic field-effect transistors (OFETs). Intrachain noncovalent coulombic interactions (via S-F and H-F interactions) were incorporated into the design of the P3T4 backbone to enhance the chain planarity. All the P3T4-based OFETs exhibited ambipolar behavior with hole-dominant transport, and the OFET performances were strongly dependent on the terminal groups. The P3T4-INCN OFET exhibited the highest carrier mobility owing to the extended π-conjugation via the INCN moiety, which enhanced the intermolecular cofacial π-π stacking and generated an efficient carrier pathway in the transistor channel. Room temperature solvent vapor annealing resulted in a dramatic increase in the carrier mobility of the OFETs without causing any damage to a polyethylene naphthalate (PEN) plastic substrate. The effects of both the terminal groups of the P3T4 small molecules and solvent vapor annealing were systematically investigated by UV-vis absorption spectroscopy, two-dimensional grazing incidence X-ray diffraction, and atomic force microscopy. In addition, a flexible OFET array with solvent-vapor-annealed P3T4-INCN was successfully fabricated on a PEN substrate. These OFET devices exhibited a hole mobility of 0.15 cm 2 V -1 s -1 , an electron mobility of 0.05 cm 2 V -1 s -1 , an on-off current ratio of ∼10 5 , and excellent mechanical stability even after 300 bending cycles.",
author = "Kim, {Min Je} and Lee, {Young Woong} and Yujeong Lee and Woo, {Han Young} and Cho, {Jeong Ho}",
year = "2018",
month = "1",
day = "1",
doi = "10.1039/c8tc01547c",
language = "English",
volume = "6",
pages = "5698--5706",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "21",

}

Solvent-vapor-annealed A-D-A-type semicrystalline conjugated small molecules for flexible ambipolar field-effect transistors. / Kim, Min Je; Lee, Young Woong; Lee, Yujeong; Woo, Han Young; Cho, Jeong Ho.

In: Journal of Materials Chemistry C, Vol. 6, No. 21, 01.01.2018, p. 5698-5706.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Solvent-vapor-annealed A-D-A-type semicrystalline conjugated small molecules for flexible ambipolar field-effect transistors

AU - Kim, Min Je

AU - Lee, Young Woong

AU - Lee, Yujeong

AU - Woo, Han Young

AU - Cho, Jeong Ho

PY - 2018/1/1

Y1 - 2018/1/1

N2 - This paper reports a series of acceptor-donor-acceptor (A-D-A)-type small molecules (named P3T4-VCN, P3T4-RCN, and P3T4-INCN) based on an oligothiophene-phenylene core with three different electron-accepting terminal groups - dicyanovinyl (VCN), cyano-rhodanine (RCN), and cyano-indanone (INCN), respectively - for application to flexible ambipolar organic field-effect transistors (OFETs). Intrachain noncovalent coulombic interactions (via S-F and H-F interactions) were incorporated into the design of the P3T4 backbone to enhance the chain planarity. All the P3T4-based OFETs exhibited ambipolar behavior with hole-dominant transport, and the OFET performances were strongly dependent on the terminal groups. The P3T4-INCN OFET exhibited the highest carrier mobility owing to the extended π-conjugation via the INCN moiety, which enhanced the intermolecular cofacial π-π stacking and generated an efficient carrier pathway in the transistor channel. Room temperature solvent vapor annealing resulted in a dramatic increase in the carrier mobility of the OFETs without causing any damage to a polyethylene naphthalate (PEN) plastic substrate. The effects of both the terminal groups of the P3T4 small molecules and solvent vapor annealing were systematically investigated by UV-vis absorption spectroscopy, two-dimensional grazing incidence X-ray diffraction, and atomic force microscopy. In addition, a flexible OFET array with solvent-vapor-annealed P3T4-INCN was successfully fabricated on a PEN substrate. These OFET devices exhibited a hole mobility of 0.15 cm 2 V -1 s -1 , an electron mobility of 0.05 cm 2 V -1 s -1 , an on-off current ratio of ∼10 5 , and excellent mechanical stability even after 300 bending cycles.

AB - This paper reports a series of acceptor-donor-acceptor (A-D-A)-type small molecules (named P3T4-VCN, P3T4-RCN, and P3T4-INCN) based on an oligothiophene-phenylene core with three different electron-accepting terminal groups - dicyanovinyl (VCN), cyano-rhodanine (RCN), and cyano-indanone (INCN), respectively - for application to flexible ambipolar organic field-effect transistors (OFETs). Intrachain noncovalent coulombic interactions (via S-F and H-F interactions) were incorporated into the design of the P3T4 backbone to enhance the chain planarity. All the P3T4-based OFETs exhibited ambipolar behavior with hole-dominant transport, and the OFET performances were strongly dependent on the terminal groups. The P3T4-INCN OFET exhibited the highest carrier mobility owing to the extended π-conjugation via the INCN moiety, which enhanced the intermolecular cofacial π-π stacking and generated an efficient carrier pathway in the transistor channel. Room temperature solvent vapor annealing resulted in a dramatic increase in the carrier mobility of the OFETs without causing any damage to a polyethylene naphthalate (PEN) plastic substrate. The effects of both the terminal groups of the P3T4 small molecules and solvent vapor annealing were systematically investigated by UV-vis absorption spectroscopy, two-dimensional grazing incidence X-ray diffraction, and atomic force microscopy. In addition, a flexible OFET array with solvent-vapor-annealed P3T4-INCN was successfully fabricated on a PEN substrate. These OFET devices exhibited a hole mobility of 0.15 cm 2 V -1 s -1 , an electron mobility of 0.05 cm 2 V -1 s -1 , an on-off current ratio of ∼10 5 , and excellent mechanical stability even after 300 bending cycles.

UR - http://www.scopus.com/inward/record.url?scp=85047939853&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047939853&partnerID=8YFLogxK

U2 - 10.1039/c8tc01547c

DO - 10.1039/c8tc01547c

M3 - Article

VL - 6

SP - 5698

EP - 5706

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 21

ER -